CJP05N60 Datasheet. Specs and Replacement
Type Designator: CJP05N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 90 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220
CJP05N60 substitution
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CJP05N60 datasheet
cjp05n60.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power MOSFET TO-220-3L Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, h... See More ⇒
cjp05n60b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode fast 2. DRAIN recovery time. Desighed... See More ⇒
Detailed specifications: CJP01N65B, CJP02N60, CJP02N65, CJP02N80, CJP04N60, CJP04N60A, CJP04N65, CJP04N65A, RFP50N06, CJP05N60B, CJP07N60, CJP07N65, CJP08N60, CJP08N65, CJP10N60, CJP10N65, CJP12N60
Keywords - CJP05N60 MOSFET specs
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