CJP05N60B Todos los transistores

 

CJP05N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJP05N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 90 nS
   Cossⓘ - Capacitancia de salida: 72 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de CJP05N60B MOSFET

   - Selección ⓘ de transistores por parámetros

 

CJP05N60B Datasheet (PDF)

 ..1. Size:140K  jiangsu
 cjp05n60b.pdf pdf_icon

CJP05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode fast 2. DRAIN recovery time. Desighed

 6.1. Size:551K  jiangsu
 cjp05n60.pdf pdf_icon

CJP05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power MOSFET TO-220-3LDescription This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, h

Otros transistores... CJP02N60 , CJP02N65 , CJP02N80 , CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A , CJP05N60 , IRFZ46N , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , CJP12N60 , CJP12N65 .

History: IRH7230 | 2SK2074 | APQ110SN5EA | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | CXDM3069N

 

 
Back to Top

 


 
.