All MOSFET. CJP05N60B Datasheet

 

CJP05N60B Datasheet and Replacement


   Type Designator: CJP05N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220
 

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CJP05N60B Datasheet (PDF)

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CJP05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode fast 2. DRAIN recovery time. Desighed

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CJP05N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power MOSFET TO-220-3LDescription This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, h

Datasheet: CJP02N60 , CJP02N65 , CJP02N80 , CJP04N60 , CJP04N60A , CJP04N65 , CJP04N65A , CJP05N60 , IRFZ46N , CJP07N60 , CJP07N65 , CJP08N60 , CJP08N65 , CJP10N60 , CJP10N65 , CJP12N60 , CJP12N65 .

History: 2N65KL-TF2-T | HMS11N60 | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R

Keywords - CJP05N60B MOSFET datasheet

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