CJPF04N80 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CJPF04N80  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: TO-220F

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CJPF04N80 datasheet

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 cjpf04n80.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N80 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This is a N-channel mode power MOSFET using advanced technology to provide planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also ca

 7.1. Size:305K  jiangsu
 cjpf04n65a.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 7.2. Size:315K  jiangsu
 cjpf04n60a.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 7.3. Size:501K  jiangsu
 cjpf04n60.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

MOSTRAR MÁS

Otros transistores... CJPF01N65B, CJPF02N60, CJPF02N65, CJPF03N80, CJPF04N60, CJPF04N60A, CJPF04N65, CJPF04N65A, IRF9640, CJPF05N60, CJPF05N60B, CJPF05N65, CJPF07N60, CJPF07N65, CJPF08N60, CJPF08N65, CJPF10N60