All MOSFET. CJPF04N80 Datasheet

 

CJPF04N80 Datasheet and Replacement


   Type Designator: CJPF04N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO-220F
 

 CJPF04N80 substitution

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CJPF04N80 Datasheet (PDF)

 ..1. Size:372K  jiangsu
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CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N80 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This is a N-channel mode power MOSFET using advanced technology to provide planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also ca

 7.1. Size:305K  jiangsu
 cjpf04n65a.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N65A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 7.2. Size:315K  jiangsu
 cjpf04n60a.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60A N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high

 7.3. Size:501K  jiangsu
 cjpf04n60.pdf pdf_icon

CJPF04N80

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF04N60 600V N-Channel Power MOSFET TO-220F General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new 1. GATE high energy device also offers a drain-to-source diode wigh fast 2. DRAIN 3. SOURCE 1 2 3

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Datasheet: CJPF01N65B , CJPF02N60 , CJPF02N65 , CJPF03N80 , CJPF04N60 , CJPF04N60A , CJPF04N65 , CJPF04N65A , IRF9640 , CJPF05N60 , CJPF05N60B , CJPF05N65 , CJPF07N60 , CJPF07N65 , CJPF08N60 , CJPF08N65 , CJPF10N60 .

History: CJPF05N60

Keywords - CJPF04N80 MOSFET datasheet

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