CJQ4435 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CJQ4435  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOP-8

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CJQ4435 datasheet

 ..1. Size:1856K  jiangsu
cjq4435.pdf pdf_icon

CJQ4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m @ -9.1A -30V 35m @ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea

 0.1. Size:2130K  jiangsu
cjq4435s.pdf pdf_icon

CJQ4435

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYP V(BR)DSS SOP8 18m @-10V -30V -7.3A 26m @ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally

 8.1. Size:653K  jiangsu
cjq4438.pdf pdf_icon

CJQ4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m @10V 60V 8.2A @4.5V 36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d

 9.1. Size:2418K  jiangsu
cjq4406.pdf pdf_icon

CJQ4435

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX SOP8 12m @10V 30V 10A 16m @4.5V DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLIC

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