CJQ4435 Datasheet. Specs and Replacement

Type Designator: CJQ4435  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP-8

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CJQ4435 datasheet

 ..1. Size:1856K  jiangsu
 cjq4435.pdf pdf_icon

CJQ4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m @ -9.1A -30V 35m @ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea... See More ⇒

 0.1. Size:2130K  jiangsu
 cjq4435s.pdf pdf_icon

CJQ4435

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYP V(BR)DSS SOP8 18m @-10V -30V -7.3A 26m @ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally ... See More ⇒

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 cjq4438.pdf pdf_icon

CJQ4435

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m @10V 60V 8.2A @4.5V 36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate Charge Equivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d... See More ⇒

 9.1. Size:2418K  jiangsu
 cjq4406.pdf pdf_icon

CJQ4435

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFET ID V (BR)DSS RDS(on)MAX SOP8 12m @10V 30V 10A 16m @4.5V DESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. APPLIC... See More ⇒

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Detailed specifications: CJPF07N65, CJPF08N60, CJPF08N65, CJPF10N60, CJPF10N65, CJPF12N60, CJPF12N65, CJQ4410, IRF3205, CJQ4438, CJQ4459, CJQ9435, CJU01N60, CJU01N65B, CJU01N80, CJU02N60, CJU02N65

Keywords - CJQ4435 MOSFET specs

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