CJQ4435
MOSFET. Datasheet pdf. Equivalent
Type Designator: CJQ4435
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 9.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 215
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
SOP-8
CJQ4435
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CJQ4435
Datasheet (PDF)
..1. Size:1856K jiangsu
cjq4435.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m@-9.1A-30V 35m@ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea
0.1. Size:2130K jiangsu
cjq4435s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYPV(BR)DSS SOP818m@-10V -30V -7.3A26m@ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally
8.1. Size:653K jiangsu
cjq4438.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m@10V60V 8.2A@4.5V36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate ChargeEquivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d
9.1. Size:2418K jiangsu
cjq4406.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFETID V (BR)DSS RDS(on)MAX SOP8 12m@10V30V10A16m@4.5VDESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.APPLIC
9.2. Size:2370K jiangsu
cjq4410.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4410 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 13.5 10m@ V 7.5A30V 20m@ 4.5V DESCRIPTION The CJQ4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideall
9.3. Size:1628K jiangsu
cjq4459.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4459 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 46m@ -10V -6.5A-30V 72m@ -4.5 V DESCRIPTION The CJQ4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protectio
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