CJQ4459 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CJQ4459
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: SOP-8

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CJQ4459 Datasheet (PDF)

..1. Size:1628K jiangsu
cjq4459.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4459 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 46m@ -10V -6.5A-30V 72m@ -4.5 V DESCRIPTION The CJQ4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protectio

9.1. Size:1856K jiangsu
cjq4435.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435 P-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 24 -10V m@-9.1A-30V 35m@ -4.5 V DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is idea

9.2. Size:2130K jiangsu
cjq4435s.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4435S P-Channel Power MOSFET ID R DS(o n) TYPV(BR)DSS SOP818m@-10V -30V -7.3A26m@ -4.5V DESCRIPTION The CJQ4435S uses advanced trench technology to provide excellent RDS(on), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally

9.3. Size:2418K jiangsu
cjq4406.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4406 N-Channel Power MOSFETID V (BR)DSS RDS(on)MAX SOP8 12m@10V30V10A16m@4.5VDESCRIPTION The CJQ4406 uses advanced trench technology to provide excellent RDS(ON)with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.APPLIC

9.4. Size:2370K jiangsu
cjq4410.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4410 N-Channel Power MOSFET ID V(BR)DSS R DS(on) MAX SOP8 13.5 10m@ V 7.5A30V 20m@ 4.5V DESCRIPTION The CJQ4410 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideall

9.5. Size:653K jiangsu
cjq4438.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ4438 N-Channel MOSFET SOP8 ID V(BR)DSS RDS(on)MAX 22m@10V60V 8.2A@4.5V36m APPLICATION FEATURE Load Switch TrenchFET Power MOSFET PWM applications Low R (on) DS Low Gate ChargeEquivalent Circuit MARKING Q4438 = Device code Q4438 Q4438 Solid d

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