CTLDM7120-M621 Todos los transistores

 

CTLDM7120-M621 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CTLDM7120-M621
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TLM621H
 

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CTLDM7120-M621 Datasheet (PDF)

 ..1. Size:456K  central
ctldm7120-m621 ctldm7120-m621h.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKIN

 3.1. Size:613K  central
ctldm7120-m832ds.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING COD

 3.2. Size:470K  central
ctldm7120-m832d.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

 3.3. Size:632K  central
ctldm7120-m563.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M563SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFETis a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte

Otros transistores... CJW1012 , CTLDM303N-M832DS , CTLDM304P-M832DS , CTLDM3590 , CTLDM7002A-M621 , CTLDM7002A-M621H , CTLDM7003-M621 , CTLDM7120-M563 , 2N7000 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS , CTLDM7181-M832D , CTLDM7590 , CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H .

History: APT41M80L | NTB125N02R | FMP76-010T | STD4NK80ZT4 | IXTH30N50P | IPP65R380C6 | IPB037N06N3

 

 
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