Справочник MOSFET. CTLDM7120-M621

 

CTLDM7120-M621 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CTLDM7120-M621
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TLM621H
     - подбор MOSFET транзистора по параметрам

 

CTLDM7120-M621 Datasheet (PDF)

 ..1. Size:456K  central
 ctldm7120-m621 ctldm7120-m621h.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M621HSURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M621H is SILICON MOSFETan Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKIN

 3.1. Size:613K  central
 ctldm7120-m832ds.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING COD

 3.2. Size:470K  central
 ctldm7120-m832d.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M832DSURFACE MOUNTwww.centralsemi.comDUAL, N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETSCTLDM7120-M832D is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Volt

 3.3. Size:632K  central
 ctldm7120-m563.pdf pdf_icon

CTLDM7120-M621

CTLDM7120-M563SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7120-M563 SILICON MOSFETis a high quality, enhancement-mode N-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLM surface mount package. This device is a TLM equivalent of the popular CMLDM7120G, SOT-563 device, featuring enhanced thermal characte

ПОКАЗАТЬ ЕЩЁ

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History: CSR24N15D | CWDM3011P | CXDM6053N | 2302P | HM2302B | DACMI060N120BZK | CTD04N11P5

 

 
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