CTLDM7590 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CTLDM7590
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 0.14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 3.7 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TLM3D6D8
Búsqueda de reemplazo de CTLDM7590 MOSFET
CTLDM7590 Datasheet (PDF)
ctldm7590.pdf

CTLDM7590SURFACE MOUNTwww.centralsemi.comP-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFETenhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics.MARKING CODE: 2FE
ctldm7002a-m621.pdf

CTLDM7002A-M621SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package.MARKING CODE: CPTLM621 CASE FEATURES: Low rDS(ON) Device is Halogen Free by design Low VDS(ON)APPLICATIONS: Low
ctldm7120-m832ds.pdf

CTLDM7120-M832DSSURFACE MOUNTwww.centralsemi.comDUAL N-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR SILICON MOSFETCTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage.MARKING COD
ctldm7181-m832d.pdf

CTLDM7181-M832DSURFACE MOUNTwww.centralsemi.comN-CHANNEL AND P-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETSCTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages.MARK
Otros transistores... CTLDM7002A-M621H , CTLDM7003-M621 , CTLDM7120-M563 , CTLDM7120-M621 , CTLDM7120-M621H , CTLDM7120-M832D , CTLDM7120-M832DS , CTLDM7181-M832D , IRF4905 , CTLDM8002A-M621 , CTLDM8002A-M621H , CTLDM8120-M621H , CTLDM8120-M832D , CTLM7110-M832D , CTLM8110-M832D , CTM01N60 , CTM02N60 .
History: NCEAP40P60G | YJD45G10A | IRFS9142
History: NCEAP40P60G | YJD45G10A | IRFS9142



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