CTLDM7590 datasheet, аналоги, основные параметры

Наименование производителя: CTLDM7590  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.14 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Cossⓘ - Выходная емкость: 3.7 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm

Тип корпуса: TLM3D6D8

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Аналог (замена) для CTLDM7590

- подборⓘ MOSFET транзистора по параметрам

 

CTLDM7590 даташит

 ..1. Size:1138K  central
ctldm7590.pdfpdf_icon

CTLDM7590

CTLDM7590 SURFACE MOUNT www.centralsemi.com P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CTLDM7590 is an SILICON MOSFET enhancement-mode P-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low rDS(ON), low threshold voltage, and very low gate charge characteristics. MARKING CODE 2 FE

 8.1. Size:612K  central
ctldm7002a-m621.pdfpdf_icon

CTLDM7590

CTLDM7002A-M621 SURFACE MOUNT www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7002A-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLM 2x1mm package. MARKING CODE CP TLM621 CASE FEATURES Low rDS(ON) Device is Halogen Free by design Low VDS(ON) APPLICATIONS Low

 8.2. Size:613K  central
ctldm7120-m832ds.pdfpdf_icon

CTLDM7590

CTLDM7120-M832DS SURFACE MOUNT www.centralsemi.com DUAL N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR SILICON MOSFET CTLDM7120-M832DS is an Enhancement-mode Dual N-Channel MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Threshold Voltage. MARKING COD

 8.3. Size:467K  central
ctldm7181-m832d.pdfpdf_icon

CTLDM7590

CTLDM7181-M832D SURFACE MOUNT www.centralsemi.com N-CHANNEL AND P-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR COMPLEMENTARY SILICON MOSFETS CTLDM7181-M832D is a Dual complementary N-Channel and P-Channel Enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. These MOSFETs offer Low rDS(ON) and Low Threshold Voltages. MARK

Другие IGBT... CTLDM7002A-M621H, CTLDM7003-M621, CTLDM7120-M563, CTLDM7120-M621, CTLDM7120-M621H, CTLDM7120-M832D, CTLDM7120-M832DS, CTLDM7181-M832D, IRF4905, CTLDM8002A-M621, CTLDM8002A-M621H, CTLDM8120-M621H, CTLDM8120-M832D, CTLM7110-M832D, CTLM8110-M832D, CTM01N60, CTM02N60