DE475-102N20A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DE475-102N20A Datasheet (PDF)

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DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 20 A Nanosecond Switching RDS(on) 0.6 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25C to 150C VDSS 1000 V TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25C ID25

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DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 24 A 30MHz Maximum Frequency RDS(on) Symbol Test Conditions Maximum Ratings 0.45 TJ = 25C to 150C VDSS 1000 V PDC = 1800W TJ = 25C to 150C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V T

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DE475-501N44A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 48 A 30MHz Maximum Frequency RDS(on) 0.13 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25C to 150C VDSS 500 V TJ = 25C to 150C; RGS = 1 M VDGR 500 V Continuous VGS 20 V

Otros transistores... DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A , DE275X2-501N16A , DE375-102N10A , DE375-102N12A , DE375-501N21A , MMIS60R580P , DE475-102N21A , DE475-501N44A , DI9400T , DI9405 , DI9430T , DI9435T , DK48N18 , DK48N75 .