DE475-102N20A Datasheet. Specs and Replacement

Type Designator: DE475-102N20A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1800 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: DE475

DE475-102N20A substitution

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DE475-102N20A datasheet

 ..1. Size:141K  ixys
 de475-102n20a.pdf pdf_icon

DE475-102N20A

DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 20 A Nanosecond Switching RDS(on) 0.6 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25 C to 150 C VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 ... See More ⇒

 3.1. Size:141K  ixys
 de475-102n21a.pdf pdf_icon

DE475-102N20A

DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 24 A 30MHz Maximum Frequency RDS(on) Symbol Test Conditions Maximum Ratings 0.45 TJ = 25 C to 150 C VDSS 1000 V PDC = 1800W TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V T... See More ⇒

 8.1. Size:140K  ixys
 de475-501n44a.pdf pdf_icon

DE475-102N20A

DE475-501N44A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 48 A 30MHz Maximum Frequency RDS(on) 0.13 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V ... See More ⇒

Detailed specifications: DE275-102N06A, DE275-201N25A, DE275-501N16A, DE275X2-102N06A, DE275X2-501N16A, DE375-102N10A, DE375-102N12A, DE375-501N21A, 7N60, DE475-102N21A, DE475-501N44A, DI9400T, DI9405, DI9430T, DI9435T, DK48N18, DK48N75

Keywords - DE475-102N20A MOSFET specs

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