DE475-102N20A Spec and Replacement
Type Designator: DE475-102N20A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1800 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: DE475
DE475-102N20A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DE475-102N20A Specs
de475-102n20a.pdf
DE475-102N20A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 1000 V High dv/dt ID25 = 20 A Nanosecond Switching RDS(on) 0.6 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25 C to 150 C VDSS 1000 V TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V Transient VGSM 30 V Tc = 25 C ID25 ... See More ⇒
de475-102n21a.pdf
DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt VDSS = 1000 V Nanosecond Switching ID25 = 24 A 30MHz Maximum Frequency RDS(on) Symbol Test Conditions Maximum Ratings 0.45 TJ = 25 C to 150 C VDSS 1000 V PDC = 1800W TJ = 25 C to 150 C; RGS = 1 M VDGR 1000 V Continuous VGS 20 V T... See More ⇒
de475-501n44a.pdf
DE475-501N44A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg VDSS = 500 V High dv/dt Nanosecond Switching ID25 = 48 A 30MHz Maximum Frequency RDS(on) 0.13 Symbol Test Conditions Maximum Ratings PDC = 1800W TJ = 25 C to 150 C VDSS 500 V TJ = 25 C to 150 C; RGS = 1 M VDGR 500 V Continuous VGS 20 V ... See More ⇒
Detailed specifications: DE275-102N06A , DE275-201N25A , DE275-501N16A , DE275X2-102N06A , DE275X2-501N16A , DE375-102N10A , DE375-102N12A , DE375-501N21A , 7N60 , DE475-102N21A , DE475-501N44A , DI9400T , DI9405 , DI9430T , DI9435T , DK48N18 , DK48N75 .
History: P8008HV
Keywords - DE475-102N20A MOSFET specs
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