DK48N78 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DK48N78
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 70 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 459 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: TO-220

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DK48N78 Datasheet (PDF)

..1. Size:1018K thinkisemi
dk48n78.pdf

DK48N78 PbDK48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The DK48N78 is N-channel MOS Field Effect Transistor DK48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

8.1. Size:724K thinkisemi
dk48n75.pdf

DK48N75 PbDK48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor DK48N75designed for high current switching applications. Rugged EAS DK48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS

9.1. Size:1176K thinkisemi
dk48n88.pdf

DK48N88 PbDK48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The DK48N88 is N-channel MOS Field Effect Transistor DK48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D

9.2. Size:1016K thinkisemi
dk48n80.pdf

DK48N80 PbDK48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS DK48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

9.3. Size:1047K thinkisemi
dk48n18.pdf

DK48N18 PbDK48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description DK48N18The DK48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea

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