DK48N78
MOSFET. Datasheet pdf. Equivalent
Type Designator: DK48N78
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 70
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 82
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 459
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072
Ohm
Package:
TO-220
DK48N78
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DK48N78
Datasheet (PDF)
..1. Size:1018K thinkisemi
dk48n78.pdf
DK48N78 PbDK48N78Pb Free Plating Product70V,80A N-Channel Trench Process Power MOSFETGeneral Description The DK48N78 is N-channel MOS Field Effect Transistor DK48N78designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
8.1. Size:724K thinkisemi
dk48n75.pdf
DK48N75 PbDK48N75Pb Free Plating Product70V,68A N-Channel Trench Process Power MOSFETGeneral Description The is N-channel MOS Field Effect Transistor DK48N75designed for high current switching applications. Rugged EAS DK48N75(TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features DS
9.1. Size:1176K thinkisemi
dk48n88.pdf
DK48N88 PbDK48N88Pb Free Plating Product70V,92A N-Channel Trench Process Power MOSFETGeneral Description The DK48N88 is N-channel MOS Field Effect Transistor DK48N88designed for high current switching applications. Rugged EAS (TO-220 HeatSink)capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features D
9.2. Size:1016K thinkisemi
dk48n80.pdf
DK48N80 PbDK48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS DK48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features
9.3. Size:1047K thinkisemi
dk48n18.pdf
DK48N18 PbDK48N18Pb Free Plating Product70V,158A N-Channel Trench Process Power MOSFETGeneral Description DK48N18The DK48N18 is N-channel MOS Field Effect Transistor (TO-220 HeatSink)designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. DSGFea
Datasheet: WPB4002
, FDM15-06KC5
, FQD2N60CTM
, FDM47-06KC5
, FDPF045N10A
, FMD15-06KC5
, FDMS8672S
, FMD21-05QC
, IRFP250N
, FDMS86368F085
, FMD47-06KC5
, FDBL86361F085
, FMK75-01F
, FMM110-015X2F
, FMM150-0075X2F
, FMM22-05PF
, FMM22-06PF
.