DKI03038 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DKI03038
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 47 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 48 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 36.1 nC
Tiempo de subida (tr): 6.4 nS
Conductancia de drenaje-sustrato (Cd): 590 pF
Resistencia entre drenaje y fuente RDS(on): 0.0042 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET DKI03038
DKI03038 Datasheet (PDF)
dki03038.pdf
30 V, 48 A, 3.4 m Low RDS(ON) N ch Trench Power MOSFET DKI03038 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ---------- 4.2 m max. (VGS = 10 V, ID = 47.2 A) Qg -------- 16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57 A) Low Total Gat
dki03038.pdf
isc N-Channel MOSFET Transistor DKI03038FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki03062.pdf
30 V, 48 A, 5.2 m Low RDS(ON) N ch Trench Power MOSFET DKI03062 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 48 A D RDS(ON) ------------ 6.5 m max. (VGS = 10 V, ID = 31 A) Qg ------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) Low Total Gat
dki03082.pdf
30 V, 29 A, 7.1 m Low RDS(ON) N ch Trench Power MOSFET DKI03082 Features Package TO-252 V(BR)DSS --------------------------------- 30 V (ID = 100 A) (4) ID ---------------------------------------------------------- 29 A D RDS(ON) ------------ 8.8 m max. (VGS = 10 V, ID = 25 A) Qg ------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gat
dki03062.pdf
isc N-Channel MOSFET Transistor DKI03062FEATURESDrain Current I =48A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
dki03082.pdf
isc N-Channel MOSFET Transistor DKI03082FEATURESDrain Current I =29A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 8.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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