DMC1029UFDB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMC1029UFDB Datasheet (PDF)

..1. Size:307K diodes
dmc1029ufdb.pdf pdf_icon

DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 Low Input Capacitance C 29m @ VGS = 4.5V 5.6A Low Profile, 0.6mm Max Height Q1 34m @ VGS = 2.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V N-Channel 44m @ VGS = 1.8V 4.5A Haloge

8.1. Size:589K diodes
dmc1028ufdb.pdf pdf_icon

DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Device BVDSS RDS(ON) max TA = +25C Low Input Capacitance 25m @ VGS = 4.5V 6.0A Low Profile, 0.6mm Max Height Q1 12V 30m @ VGS = 3.3V 5.5A ESD HBM Protected up to 1.5KV, MM Protected up to 150V. N-Channel 32m @ VGS = 2.5V 5.3A Totally Lea

9.1. Size:446K diodes
dmc1017upd.pdf pdf_icon

DMC1017UPDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID Device V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 17m @ VGS = 4.5V 9.5A Q1 12V Low Input Capacitance 25m @ VGS = 2.5V 7.8A Fas

9.2. Size:347K diodes
dmc1030ufdb.pdf pdf_icon

DMC1030UFDBCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-ResistanceDevice V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 34m @ VGS = 4.5V 5.1A ESD Protected Gate 40m @ VGS = 2.5V 4.7A Q1 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) N-Channel 50m @ VGS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .