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DMG4N65CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG4N65CT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13.8 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET DMG4N65CT

 

DMG4N65CT Datasheet (PDF)

 ..1. Size:273K  diodes
 dmg4n65ct.pdf pdf_icon

DMG4N65CT

DMG4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage 650V 3.0 @VGS = 10V TO220-3 4.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q

 ..2. Size:261K  inchange semiconductor
 dmg4n65ct.pdf pdf_icon

DMG4N65CT

isc N-Channel MOSFET Transistor DMG4N65CT FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 0.1. Size:321K  diodes
 dmg4n65cti.pdf pdf_icon

DMG4N65CT

DMG4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for power application TC = 25 C Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 650V 3.0 @VGS = 10V ITO220-3 4.0 A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC

 0.2. Size:252K  inchange semiconductor
 dmg4n65cti.pdf pdf_icon

DMG4N65CT

isc N-Channel MOSFET Transistor DMG4N65CTI FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

MOSTRAR MÁS

Otros transistores... DMG3413L , DMG3418L , DMG4406LSS , DMG4407SSS , DMG4511SK4 , DMG4710SSS , DMG4812SSS , DMG4932LSD , AON6380 , DMG4N65CTI , DMG6301UDW , DMG6402LVT , DMG6601LVT , DMG6602SVTQ , DMG7401SFG , DMG7408SFG , DMG7410SFG .

 

 
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