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DMG9N65CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG9N65CT
   Código: 9N65CT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 165 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 39 nC
   Tiempo de subida (tr): 29 nS
   Conductancia de drenaje-sustrato (Cd): 122 pF
   Resistencia entre drenaje y fuente RDS(on): 1.3 Ohm
   Paquete / Cubierta: TO-220AB

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DMG9N65CT Datasheet (PDF)

 ..1. Size:226K  diodes
dmg9n65ct.pdf

DMG9N65CT
DMG9N65CT

DMG9N65CT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for Power Application TC = +25C Low Input/Output Leakage 650V 1.3 @ VGS = 10V TO-220AB 9.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

 ..2. Size:261K  inchange semiconductor
dmg9n65ct.pdf

DMG9N65CT
DMG9N65CT

isc N-Channel MOSFET Transistor DMG9N65CTFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.1. Size:407K  diodes
dmg9n65cti.pdf

DMG9N65CT
DMG9N65CT

DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(ON) Package TC = +25C High BVDss Rating for Power Application 650V 1.3 @ VGS = 10V ITO-220AB 9.0A Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 0.2. Size:252K  inchange semiconductor
dmg9n65cti.pdf

DMG9N65CT
DMG9N65CT

isc N-Channel MOSFET Transistor DMG9N65CTIFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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