DMG9N65CT Todos los transistores

 

DMG9N65CT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMG9N65CT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 165 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 122 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO-220AB
     - Selección de transistores por parámetros

 

DMG9N65CT Datasheet (PDF)

 ..1. Size:226K  diodes
dmg9n65ct.pdf pdf_icon

DMG9N65CT

DMG9N65CT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for Power Application TC = +25C Low Input/Output Leakage 650V 1.3 @ VGS = 10V TO-220AB 9.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

 ..2. Size:261K  inchange semiconductor
dmg9n65ct.pdf pdf_icon

DMG9N65CT

isc N-Channel MOSFET Transistor DMG9N65CTFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.1. Size:407K  diodes
dmg9n65cti.pdf pdf_icon

DMG9N65CT

DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(ON) Package TC = +25C High BVDss Rating for Power Application 650V 1.3 @ VGS = 10V ITO-220AB 9.0A Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 0.2. Size:252K  inchange semiconductor
dmg9n65cti.pdf pdf_icon

DMG9N65CT

isc N-Channel MOSFET Transistor DMG9N65CTIFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGN035N08AL | WM02N08L | CP650 | SWF2N70D

 

 
Back to Top

 


 
.