SFI9530 Todos los transistores

 

SFI9530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFI9530
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 66 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 10.5 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 30 nC
   Tiempo de subida (tr): 22 nS
   Conductancia de drenaje-sustrato (Cd): 160 pF
   Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
   Paquete / Cubierta: TO262

 Búsqueda de reemplazo de MOSFET SFI9530

 

SFI9530 Datasheet (PDF)

 ..1. Size:210K  samsung
sfi9530.pdf

SFI9530 SFI9530

SFW/I9530Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)112331. Gate 2.

 9.1. Size:230K  fairchild semi
sfi9510 sfw9510.pdf

SFI9530 SFI9530

SFW/I9510Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -3.6 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.912 (Typ.)112331. Gate

 9.2. Size:228K  fairchild semi
sfw9520 sfi9520.pdf

SFI9530 SFI9530

SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.0 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)112331. Gat

 9.3. Size:503K  samsung
sfi9540.pdf

SFI9530 SFI9530

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut

 9.4. Size:207K  samsung
sfi9520.pdf

SFI9530 SFI9530

SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.0 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)112331. Gate 2. D

Otros transistores... SFH154 , SFH9140 , SFH9154 , SFH9240 , SFH9244 , SFI2955 , SFI9510 , SFI9520 , 5N60 , SFI9610 , SFI9614 , SFI9620 , SFI9624 , SFI9630 , SFI9634 , SFI9640 , SFI9644 .

 

 
Back to Top

 


SFI9530
  SFI9530
  SFI9530
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: MRF5035 | MRF5015 | MRF5007R1 | MRF5007 | MRF5003 | MRF275G | MRF184S | MRF184 | MRF177M | MRF177 | MRF176GV | MRF176GU | MRF175LV | MRF175LU | MRF175GV | MRF175GU

 

 

 
Back to Top