DMN15H310SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN15H310SE
Código: 15H310
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.9 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 4.6 nC
Tiempo de subida (tr): 7.8 nS
Conductancia de drenaje-sustrato (Cd): 40 pF
Resistencia entre drenaje y fuente RDS(on): 0.31 Ohm
Paquete / Cubierta: SOT-223
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DMN15H310SE Datasheet (PDF)
dmn15h310se.pdf
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DMN15H310SE150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25C Low On-Resistance 310m @ VGS = 10V 2.0A 150V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 330m @ VGS = 5.0V 1.9A Halogen and Antimony Free. Green D
dmn15h310sk3.pdf
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DMN15H310SK3 Green150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 310m @ VGS = 10V 8.3A 150V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 330m @ VGS = 5.0V 8.0A
dmn15h310sk3.pdf
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isc N-Channel MOSFET Transistor DMN15H310SK3FEATURESDrain Current I = 8.3A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 310m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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