DMN15H310SE Datasheet. Specs and Replacement
Type Designator: DMN15H310SE 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT-223
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DMN15H310SE substitution
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DMN15H310SE datasheet
dmn15h310se.pdf
DMN15H310SE 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25 C Low On-Resistance 310m @ VGS = 10V 2.0A 150V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 330m @ VGS = 5.0V 1.9A Halogen and Antimony Free. Green D... See More ⇒
dmn15h310sk3.pdf
DMN15H310SK3 Green 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25 C density end products 310m @ VGS = 10V 8.3A 150V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 330m @ VGS = 5.0V 8.0A ... See More ⇒
dmn15h310sk3.pdf
isc N-Channel MOSFET Transistor DMN15H310SK3 FEATURES Drain Current I = 8.3A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 310m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
Detailed specifications: DMN10H170SK3, DMN10H170SVT, DMN10H220L, DMN10H220LE, DMN10H220LVT, DMN1150UFB, DMN1260UFA, DMN13H750S, K2611, DMN2005UFG, DMN2011UFDE, DMN2011UFX, DMN2013UFDE, DMN2013UFX, DMN2014LHAB, DMN2015UFDE, DMN2016LFG
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