DMN15H310SE
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN15H310SE
Marking Code: 15H310
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.6
nC
trⓘ - Rise Time: 7.8
nS
Cossⓘ -
Output Capacitance: 40
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31
Ohm
Package:
SOT-223
DMN15H310SE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN15H310SE
Datasheet (PDF)
..1. Size:372K diodes
dmn15h310se.pdf
DMN15H310SE150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) max Fast Switching Speed TA = +25C Low On-Resistance 310m @ VGS = 10V 2.0A 150V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 330m @ VGS = 5.0V 1.9A Halogen and Antimony Free. Green D
4.1. Size:507K diodes
dmn15h310sk3.pdf
DMN15H310SK3 Green150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) ensures on state losses are minimized ID V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TC = +25C density end products 310m @ VGS = 10V 8.3A 150V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 330m @ VGS = 5.0V 8.0A
4.2. Size:265K inchange semiconductor
dmn15h310sk3.pdf
isc N-Channel MOSFET Transistor DMN15H310SK3FEATURESDrain Current I = 8.3A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 310m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
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