DMN2011UFDE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN2011UFDE
   Código: N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.61 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 11.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 295 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: U-DFN2020-6

Búsqueda de reemplazo de MOSFET DMN2011UFDE

DMN2011UFDE Datasheet (PDF)

..1. Size:334K diodes
dmn2011ufde.pdf

DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm Profile Ideal for Low Profile Applications V(BR)DSS RDS(ON) max TA = +25C PCB Footprint of 4mm2 9.5m @ VGS = 4.5V 11.7A Low Gate Threshold Voltage 20V 11m @ VGS = 2.5V 10.8A Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compl

5.1. Size:390K diodes
dmn2011ufx.pdf

DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 9.5m @ VGS = 4.5V 12.2 A Fast Switching Speed 20V 10.4 A 13m @ VGS = 2.5V Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

8.1. Size:297K diodes
dmn2016lhab.pdf

DMN2016LHABDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on)max Low Gate Threshold Voltage TA = +25C 15.5m @ VGS = 4.5V 7.5A Low Input Capacitance 16.5m @ VGS = 4.0V 7.3A Fast Switching Speed 20V 19m @ VGS = 3.1V 6.9A ESD Protected Gate 20m @ VGS = 2.5V 6.7A Totally Lead-Free & Fully

8.2. Size:489K diodes
dmn2015ufde.pdf

DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Package TA = +25C Low Gate Threshold Voltage Low On-Resistance 11.6m @ VGS = 4.5V 10.5A U-DFN2020-6 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Type E

8.3. Size:284K diodes
dmn2013ufde.pdf

DMN2013UFDE20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) MAX PackageTA = +25C PCB footprint of 4mm2 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13m @ VGS = 2.5V U-DFN2020-6 9.4A ESD Protected Gate20V Totally Lead-Free & Fully RoHS Complian

8.4. Size:270K diodes
dmn2013ufx.pdf

DMN2013UFXDual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 11.5m @ VGS = 4.5V 10 A Low Input/Output Leakage ESD Protected 20V 14m @ VGS = 2.5V 9 A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halog

8.5. Size:168K diodes
dmn2016uts.pdf

DMN2016UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020

8.6. Size:223K diodes
dmn2019uts.pdf

DMN2019UTS20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 18.5m @ VGS = 10V 5.4 A ESD Protected up to 2KV 21m @ VGS = 4.5V 5.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 24m @ VGS = 2.5V 4.6 A Halogen a

8.7. Size:188K diodes
dmn2016lfg.pdf

DMN2016LFGDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed ESD Protected Gate 18m @ VGS = 4.5V 5.2A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V "Green" Device (Note 2) 30m

8.8. Size:262K diodes
dmn2014lhab.pdf

DMN2014LHABDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Gate Threshold Voltage 13m @ VGS = 4.5V 9.0A Low Input Capacitance 14m @ VGS = 4.0V 8.7A Fast Switching Speed 20V 17m @ VGS = 3.1V 8.0A ESD Protected Gate 18m @ VGS = 2.5V 6.7A Totally Lead-Free & Full

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