DMN2011UFDE - описание и поиск аналогов

 ..1. Size:334K  diodes
 dmn2011ufde.pdf 

DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max 0.6mm Profile Ideal for Low Profile Applications V(BR)DSS RDS(ON) max TA = +25 C PCB Footprint of 4mm2 9.5m @ VGS = 4.5V 11.7A Low Gate Threshold Voltage 20V 11m @ VGS = 2.5V 10.8A Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compl

 5.1. Size:390K  diodes
 dmn2011ufx.pdf 

 8.1. Size:297K  diodes
 dmn2016lhab.pdf 

DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on)max Low Gate Threshold Voltage TA = +25 C 15.5m @ VGS = 4.5V 7.5A Low Input Capacitance 16.5m @ VGS = 4.0V 7.3A Fast Switching Speed 20V 19m @ VGS = 3.1V 6.9A ESD Protected Gate 20m @ VGS = 2.5V 6.7A Totally Lead-Free & Fully

 8.2. Size:489K  diodes
 dmn2015ufde.pdf 

DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Package TA = +25 C Low Gate Threshold Voltage Low On-Resistance 11.6m @ VGS = 4.5V 10.5A U-DFN2020-6 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Type E

 8.3. Size:284K  diodes
 dmn2013ufde.pdf 

DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 0.6mm profile ideal for low profile applications V(BR)DSS RDS(ON) MAX Package TA = +25 C PCB footprint of 4mm2 11m @ VGS = 4.5V U-DFN2020-6 10.5A Low Gate Threshold Voltage 13m @ VGS = 2.5V U-DFN2020-6 9.4A ESD Protected Gate 20V Totally Lead-Free & Fully RoHS Complian

 8.4. Size:270K  diodes
 dmn2013ufx.pdf 

DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 11.5m @ VGS = 4.5V 10 A Low Input/Output Leakage ESD Protected 20V 14m @ VGS = 2.5V 9 A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halog

 8.5. Size:168K  diodes
 dmn2016uts.pdf 

DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case TSSOP-8L Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020

 8.6. Size:223K  diodes
 dmn2019uts.pdf 

DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 18.5m @ VGS = 10V 5.4 A ESD Protected up to 2KV 21m @ VGS = 4.5V 5.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 24m @ VGS = 2.5V 4.6 A Halogen a

 8.7. Size:188K  diodes
 dmn2016lfg.pdf 

DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed ESD Protected Gate 18m @ VGS = 4.5V 5.2A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V "Green" Device (Note 2) 30m

 8.8. Size:262K  diodes
 dmn2014lhab.pdf 

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Gate Threshold Voltage 13m @ VGS = 4.5V 9.0A Low Input Capacitance 14m @ VGS = 4.0V 8.7A Fast Switching Speed 20V 17m @ VGS = 3.1V 8.0A ESD Protected Gate 18m @ VGS = 2.5V 6.7A Totally Lead-Free & Full