DMN21D2UFB Todos los transistores

 

DMN21D2UFB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN21D2UFB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.99 Ohm
   Paquete / Cubierta: X1-DFN1006-3
 

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DMN21D2UFB Datasheet (PDF)

 ..1. Size:214K  diodes
 dmn21d2ufb.pdf pdf_icon

DMN21D2UFB

DMN21D2UFB20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Very low Gate Threshold Voltage, 1.0V max ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 0.99 @ VGS = 4.5V 760mA Ultra-Small Surface Mount Package 1mm x 0.6mm Low Package Profile, 0.5mm Maximum Package height

 9.1. Size:120K  diodes
 dmn2104l-7.pdf pdf_icon

DMN21D2UFB

DMN2104LN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 53m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 104m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gat

 9.2. Size:128K  diodes
 dmn2170u-7.pdf pdf_icon

DMN21D2UFB

DMN2170UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 70m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 100m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-

 9.3. Size:111K  diodes
 dmn2100udm.pdf pdf_icon

DMN21D2UFB

DMN2100UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-26 55 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 70 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-

MOSTRAR MÁS

Otros transistores... DMN2029USD , DMN2041UFDB , DMN2046U , DMN2050LFDB , DMN2065UW , DMN2075UDW , DMN2104L-7 , DMN2170U-7 , IRF640N , DMN2250UFB , DMN2300UFD , DMN2300UFL4 , DMN2320UFB4 , DMN2400UFB , DMN2400UFD , DMN24H11DS , DMN24H3D5L .

History: HTD1K5N10 | QM3014M6 | BL7N60A-D

 

 
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