DMN3010LK3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN3010LK3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19.6 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: TO-252

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DMN3010LK3 datasheet

 ..1. Size:276K  diodes
 dmn3010lk3.pdf pdf_icon

DMN3010LK3

DMN3010LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher 9.5m @ VGS = 10V 43A density end products 30V 11.5m @ VGS = 4.5V 39A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and

 ..2. Size:266K  inchange semiconductor
 dmn3010lk3.pdf pdf_icon

DMN3010LK3

isc N-Channel MOSFET Transistor DMN3010LK3 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 6.1. Size:426K  1
 dmn3010lfg-7.pdf pdf_icon

DMN3010LK3

DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A

 6.2. Size:426K  diodes
 dmn3010lfg.pdf pdf_icon

DMN3010LK3

DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25 C Small form factor thermally efficient package enables higher density end products 8.5m @ VGS = 10V 30A 30V Occupies just 33% of the board area occupied by SO-8 enabling 10.5m @ VGS = 4.5V 25A

MOSTRAR MÁS

Otros transistores... DMN2500UFB4, DMN2501UFB4, DMN2550UFA, DMN25D0UFA, DMN2990UFA, DMN2990UFZ, DMN3008SFG, DMN3010LFG, 2SK3878, DMN3015LSD, DMN3016LDN, DMN3016LFDE, DMN3016LK3, DMN3016LPS, DMN3016LSS, DMN3018SFG, DMN3018SSD