DMN3730UFB-7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN3730UFB-7
   Código: NE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.69 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 8 V
   Corriente continua de drenaje |Id|: 0.91 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 0.95 V
   Carga de la puerta (Qg): 1.6 nC
   Tiempo de subida (tr): 2.8 nS
   Conductancia de drenaje-sustrato (Cd): 6.1 pF
   Resistencia entre drenaje y fuente RDS(on): 0.46 Ohm
   Paquete / Cubierta: DFN1006-3

Búsqueda de reemplazo de MOSFET DMN3730UFB-7

DMN3730UFB-7 Datasheet (PDF)

..1. Size:144K diodes
dmn3730ufb-7 dmn3730ufb.pdf

A Product Line ofDiodes Incorporated DMN3730UFB30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.5mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V

4.1. Size:140K diodes
dmn3730ufb4.pdf

DMN3730UFB430V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.4mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V Lead Free, RoHS Compliant (Note

6.1. Size:190K diodes
dmn3730u.pdf

A Product Line ofDiodes IncorporatedDMN3730U30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits ID Max (Note 5) Low VGS(th), can be driven directly from a battery V(BR)DSS Max RDS(on) Low RDS(on) TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30

6.2. Size:170K tysemi
dmn3730u.pdf

Product specification DMN3730U30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits Low VGS(th), can be driven directly from a battery ID Max (Note 5)V(BR)DSS Max RDS(on) Low RDS(on)TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30V ESD Protect

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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