DMN3730UFB-7 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DMN3730UFB-7
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.91 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 2.8 ns
Cossⓘ - Выходная емкость: 6.1 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm
Тип корпуса: DFN1006-3
- подбор MOSFET транзистора по параметрам
DMN3730UFB-7 Datasheet (PDF)
dmn3730ufb-7 dmn3730ufb.pdf

A Product Line ofDiodes Incorporated DMN3730UFB30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.5mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V
dmn3730ufb4.pdf

DMN3730UFB430V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.4mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V Lead Free, RoHS Compliant (Note
dmn3730u.pdf

A Product Line ofDiodes IncorporatedDMN3730U30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits ID Max (Note 5) Low VGS(th), can be driven directly from a battery V(BR)DSS Max RDS(on) Low RDS(on) TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30
dmn3730u.pdf

Product specification DMN3730U30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits Low VGS(th), can be driven directly from a battery ID Max (Note 5)V(BR)DSS Max RDS(on) Low RDS(on)TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30V ESD Protect
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NTA4153NT1 | AP4604IN | 2SK1471 | IRL8113LPBF | 2SK1637 | IRLSZ34A | STD14NM50N
History: NTA4153NT1 | AP4604IN | 2SK1471 | IRL8113LPBF | 2SK1637 | IRLSZ34A | STD14NM50N



Список транзисторов
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