DMN4060SVT-7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN4060SVT-7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 4.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 8.1 nS
Cossⓘ - Capacitancia de salida: 57 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
Encapsulados: TSOT-26
Búsqueda de reemplazo de DMN4060SVT-7 MOSFET
- Selecciónⓘ de transistores por parámetros
DMN4060SVT-7 datasheet
..1. Size:206K diodes
dmn4060svt-7.pdf 
DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards
4.1. Size:206K diodes
dmn4060svt.pdf
DMN4060SVT 45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards
9.1. Size:330K diodes
dmn4008lfg.pdf
DMN4008LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max Small Form Factor Thermally Efficient Package Enables Higher V(BR)DSS RDS(ON) max TA = +25 C Density End Products 7.5m @ VGS = 10V 14.4A 40V Occupies Just 33% of the Board Area Occupied by SO-8 Enabli
9.2. Size:649K diodes
dmn4030lk3.pdf
A Product Line of Diodes Incorporated DMN4030LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 30m @ VGS = 10V 13.7A Qualified to AEC-Q101 Standards
9.3. Size:464K diodes
dmn4026sk3.pdf
DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25 C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5
9.4. Size:694K diodes
dmn4034ssd.pdf
A Product Line of Diodes Incorporated DMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 6.3A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 4.8A Me
9.5. Size:664K diodes
dmn4015lk3.pdf
A Product Line of Diodes Incorporated DMN4015LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 15m @ VGS= 10V 20.8A 40V 20m @ VGS= 4.5V 18.0A Mech
9.6. Size:287K diodes
dmn4010lk3.pdf
DMN4010LK3 Green 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TC = +25 C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11.5m @ VGS = 10V 39A 40V Halogen and Antimony Free. Green Device (Note 3) 14.5m @ VGS = 4.5V 35A Qualified to AEC-Q101 Standards for Hi
9.7. Size:676K diodes
dmn4027sss.pdf
A Product Line of Diodes Incorporated DMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability 40V 47m @ VGS= 4.5V 6.1A Mechanic
9.8. Size:677K diodes
dmn4034sss.pdf
A Product Line of Diodes Incorporated DMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 7.2A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 5.5A Mechani
9.9. Size:286K diodes
dmn4020lfde.pdf
DMN4020LFDE 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25 C Low On-Resistance 20m @ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim
9.10. Size:404K diodes
dmn4031ssdq.pdf
DMN4031SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TA = +25 C (Note 7) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.8A Qualifie
9.11. Size:424K diodes
dmn4031ssd.pdf
DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TA = +25 C (Note 5) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.6A Qualifie
9.12. Size:534K diodes
dmn4035l.pdf
DMN4035L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV R max I max Low Input Capacitance DSS DS(ON) D Fast Switching Speed Low Input/Output Leakage 42m @ V = 10V 4.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 52m @ V = 4
9.13. Size:695K diodes
dmn4027ssd.pdf
A Product Line of Diodes Incorporated DMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability 40V 47m @ VGS= 4.5V 5.4A Mec
9.14. Size:220K diodes
dmn4010lfg.pdf
DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small, form factor, thermally efficient package enables higher density end products 12m @ VGS = 10V 11.5A 40V Occupies just 33% of the board area occupied by SO-8 enabling
9.15. Size:645K diodes
dmn4036lk3.pdf
A Product Line of Diodes Incorporated DMN4036LK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 36m @ VGS= 10V 12.2A Qualified to AEC-Q101 Standards for High Reliability 40V 61m @ VGS= 4.5V 9.4A Mechani
9.17. Size:266K inchange semiconductor
dmn4030lk3.pdf
isc N-Channel MOSFET Transistor DMN4030LK3 FEATURES Drain Current I = 9.6A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
9.18. Size:266K inchange semiconductor
dmn4026sk3.pdf
isc N-Channel MOSFET Transistor DMN4026SK3 FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.19. Size:266K inchange semiconductor
dmn4010lk3.pdf
isc N-Channel MOSFET Transistor DMN4010LK3 FEATURES Drain Current I = 39A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
9.20. Size:266K inchange semiconductor
dmn4036lk3.pdf
isc N-Channel MOSFET Transistor DMN4036LK3 FEATURES Drain Current I = 12.2A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 36m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
9.21. Size:265K inchange semiconductor
dmn4040sk3.pdf
isc N-Channel MOSFET Transistor DMN4040SK3 FEATURES Drain Current I = 13.8A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu
Otros transistores... DMN3730UFB-7, DMN3900UFA, DMN4008LFG, DMN4010LFG, DMN4010LK3, DMN4020LFDE, DMN4026SK3, DMN4026SSD, 8N60, DMN53D0L, DMN53D0LDW, DMN53D0LT, DMN53D0LV, DMN53D0LW, DMN53D0U, DMN5L06-7, DMN5L06DMKQ
