DMN4060SVT45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards

DMN4060SVT45V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 46m @ VGS = 10V 4.8A "Green" Device (Note 2) 45V 62m @ VGS = 4.5V 4.1A Qualified to AEC-Q101 Standards

DMN4008LFG40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max Small Form Factor Thermally Efficient Package Enables Higher V(BR)DSS RDS(ON) max TA = +25C Density End Products 7.5m @ VGS = 10V 14.4A 40V Occupies Just 33% of the Board Area Occupied by SO-8 Enabli

A Product Line ofDiodes IncorporatedDMN4030LK340V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 30m @ VGS = 10V 13.7A Qualified to AEC-Q101 Standards

DMN4026SK3 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Low On-resistance TC = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 24m @VGS = 10V 28A 40V Halogen and Antimony Free. Green Device (Note 3) 32m @VGS = 4.5

A Product Line ofDiodes IncorporatedDMN4034SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 6.3A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 4.8A Me

A Product Line ofDiodes IncorporatedDMN4015LK340V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 15m @ VGS= 10V 20.8A 40V 20m @ VGS= 4.5V 18.0A Mech

DMN4010LK3Green40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low On-Resistance V(BR)DSS RDS(ON) max TC = +25C Low Input Capacitance Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 11.5m @ VGS = 10V 39A 40V Halogen and Antimony Free. Green Device (Note 3) 14.5m @ VGS = 4.5V 35A Qualified to AEC-Q101 Standards for Hi

A Product Line ofDiodes IncorporatedDMN4027SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 8.0A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 6.1A Mechanic

A Product Line ofDiodes IncorporatedDMN4034SSS 40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 34m @ VGS= 10V 7.2A Qualified to AEC-Q101 Standards for High Reliability 40V 59m @ VGS= 4.5V 5.5A Mechani

DMN4020LFDE40V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm profile ideal for low profile applications PCB footprint of 4mm2 ID max V(BR)DSS RDS(ON) max Low Gate Threshold Voltage TA = +25C Low On-Resistance 20m@ VGS = 10V 8.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antim

DMN4031SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance BVDSS RDS(ON) Max TA = +25C (Note 7) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.8A Qualifie

DMN4031SSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TA = +25C (Note 5) Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 31m @ VGS = 10V 7.0A 40V Halogen and Antimony Free. Green Device (Note 3) 50m @ VGS = 4.5V 5.6A Qualifie

DMN4035L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance BV R max I max Low Input Capacitance DSS DS(ON) D Fast Switching Speed Low Input/Output Leakage 42m @ V = 10V 4.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40V Halogen and Antimony Free. Green Device (Note 3) 52m @ V = 4

A Product Line ofDiodes IncorporatedDMN4027SSD 40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 27m @ VGS= 10V 7.1A Qualified to AEC-Q101 Standards for High Reliability40V 47m @ VGS= 4.5V 5.4A Mec

DMN4010LFG 40V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small, form factor, thermally efficient package enables higher density end products 12m @ VGS = 10V 11.5A 40V Occupies just 33% of the board area occupied by SO-8 enabling

A Product Line ofDiodes IncorporatedDMN4036LK340V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 36m @ VGS= 10V 12.2A Qualified to AEC-Q101 Standards for High Reliability 40V 61m @ VGS= 4.5V 9.4A Mechani

DMN4026SSD40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 24m @VGS = 10V 9.0A Fast Switching Speed 40V 32m @VGS = 4.5V 7.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

isc N-Channel MOSFET Transistor DMN4030LK3FEATURESDrain Current I = 9.6A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor DMN4026SK3FEATURESDrain Current I = 28A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor DMN4010LK3FEATURESDrain Current I = 39A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

isc N-Channel MOSFET Transistor DMN4036LK3FEATURESDrain Current I = 12.2A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

isc N-Channel MOSFET Transistor DMN4040SK3FEATURESDrain Current I = 13.8A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu