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DMN62D0LFB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN62D0LFB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 4.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: X1-DFN1006-3
 

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DMN62D0LFB Datasheet (PDF)

 ..1. Size:270K  diodes
 dmn62d0lfb.pdf pdf_icon

DMN62D0LFB

DMN62D0LFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual

 5.1. Size:323K  diodes
 dmn62d0lfd.pdf pdf_icon

DMN62D0LFB

DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge

 7.1. Size:456K  diodes
 dmn62d0u.pdf pdf_icon

DMN62D0LFB

DMN62D0U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 2 @ VGS = 4.5V 380mA 60V Fast Switching Speed 340mA 2.5 @ VGS = 2.5V Low Input/Output Leakage ESD Protected Up To 1kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Desc

 7.2. Size:216K  diodes
 dmn62d0sfd.pdf pdf_icon

DMN62D0LFB

DMN62D0SFDN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed ESD Protected Gate to 2kV 2 @ VGS = 10V 540mA Lead Free/RoHS Compliant (Note 1) 60V Green Device (Note 2) Qualified to AEC-Q101 Standard

MOSTRAR MÁS

Otros transistores... DMN6040SSS , DMN6040SVT , DMN6069SE , DMN6070SFCL , DMN6070SSD , DMN6075S , DMN6140L , DMN6140LQ , AO4468 , DMN62D0LFD , DMN62D0SFD , DMN62D1LFD , DMN63D8LDW , DMN63D8LV , DMN65D8L , DMN65D8LDW , DMN65D8LFB .

History: GT15N10S | FDMB3900AN | RRR030P03 | 2N60F | 5LN01M

 

 
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