DMN62D1LFD Todos los transistores

 

DMN62D1LFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN62D1LFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 4.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: X1-DFN1212-3
 

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DMN62D1LFD Datasheet (PDF)

 ..1. Size:356K  diodes
 dmn62d1lfd.pdf pdf_icon

DMN62D1LFD

DMN62D1LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = +25C 2 @ VGS = 4V 400mA Fast Switching Speed 60V 2.5 @ VGS = 2.5V 350mA Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applicat

 7.1. Size:259K  diodes
 dmn62d1sfb.pdf pdf_icon

DMN62D1LFD

DMN62D1SFB60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Footprint of just 0.6mm2 thirteen times smaller than SOT23 V(BR)DSS RDS(on) Max @ TA = +25C Low On-Resistance1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 60V Fast Switching Speed 1.6 @ VGS= 4.5V 0.38A Ultra-Small Surface Mount Package ESD P

 8.1. Size:270K  diodes
 dmn62d0lfb.pdf pdf_icon

DMN62D1LFD

DMN62D0LFBN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 2 @ VGS = 4V 100mA Low Input/Output Leakage 60V ESD Protected 2.5 @ VGS = 2.5V 50mA Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qual

 8.2. Size:323K  diodes
 dmn62d0lfd.pdf pdf_icon

DMN62D1LFD

DMN62D0LFD N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Fast Switching Speed 2 @ VGS = 4V 310mA 60V Low Input/Output Leakage 2.5 @ VGS = 2.5V 295mA ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Haloge

MOSTRAR MÁS

Otros transistores... DMN6070SFCL , DMN6070SSD , DMN6075S , DMN6140L , DMN6140LQ , DMN62D0LFB , DMN62D0LFD , DMN62D0SFD , IRF3205 , DMN63D8LDW , DMN63D8LV , DMN65D8L , DMN65D8LDW , DMN65D8LFB , DMN65D8LW , DMN7022LFG , DMP1011UCB9 .

History: AM1440N | QM3001D | MTP2311N3

 

 
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