DMP21D5UFB4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMP21D5UFB4

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.3 nS

Cossⓘ - Capacitancia de salida: 7.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.97 Ohm

Encapsulados: X2-DFN1006-3

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DMP21D5UFB4 datasheet

 ..1. Size:244K  diodes
 dmp21d5ufb4.pdf pdf_icon

DMP21D5UFB4

DMP21D5UFB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25 C Low Input Capacitance Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Ultra-Small Surfaced Mount Package 1.5 @ VGS = -2.5V -600mA Ultra-low package profile, 0.4

 5.1. Size:185K  diodes
 dmp21d5ufd.pdf pdf_icon

DMP21D5UFB4

DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(ON) max Package Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25 C Low Input Capacitance 1.0 @ VGS = -4.5V -600mA Fast Switching Speed 1.5 @ VGS = -2.5V -500mA ESD Protected Gate -20V X1-DFN1212-3 2.0 @ VGS = -1.8V -400mA Tot

 8.1. Size:164K  diodes
 dmp21d0ut.pdf pdf_icon

DMP21D5UFB4

A Product Line of Diodes Incorporated DMP21D0UT 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25 C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate

 8.2. Size:230K  diodes
 dmp21d0ufd.pdf pdf_icon

DMP21D5UFB4

A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25 C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G

MOSTRAR MÁS

Otros transistores... DMP2070UCB6, DMP2100U, DMP2100UCB9, DMP213DUFA, DMP2160UFDBQ, DMP21D0UFD, DMP21D0UT, DMP21D2UFA, IRF1010E, DMP21D5UFD, DMP2200UDW, DMP2200UFCL, DMP2240UWQ, DMP22D4UFA, DMP22M2UPS, DMP2305UVT, DMP2540UCB9