DMP21D5UFB4 Todos los transistores

 

DMP21D5UFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMP21D5UFB4
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.46 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.3 nS
   Cossⓘ - Capacitancia de salida: 7.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.97 Ohm
   Paquete / Cubierta: X2-DFN1006-3
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DMP21D5UFB4 Datasheet (PDF)

 ..1. Size:244K  diodes
dmp21d5ufb4.pdf pdf_icon

DMP21D5UFB4

DMP21D5UFB4P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 1.0 @ VGS = -4.5V -700mA Ultra-Small Surfaced Mount Package 1.5 @ VGS = -2.5V -600mA Ultra-low package profile, 0.4

 5.1. Size:185K  diodes
dmp21d5ufd.pdf pdf_icon

DMP21D5UFB4

DMP21D5UFDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(ON) max Package Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = +25C Low Input Capacitance 1.0 @ VGS = -4.5V -600mA Fast Switching Speed 1.5 @ VGS = -2.5V -500mA ESD Protected Gate -20V X1-DFN1212-3 2.0 @ VGS = -1.8V -400mA Tot

 8.1. Size:164K  diodes
dmp21d0ut.pdf pdf_icon

DMP21D5UFB4

A Product Line ofDiodes IncorporatedDMP21D0UT20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 3mm2 less than half the size of SOT23 ID Max 0.8mm profile ideal for low profile applications V(BR)DSS RDS(on) Max @ TA = 25C Low Gate Threshold Voltage (Note 4) Fast Switching Speed ESD Protected Gate

 8.2. Size:230K  diodes
dmp21d0ufd.pdf pdf_icon

DMP21D5UFB4

A Product Line ofDiodes IncorporatedDMP21D0UFD20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) ESD Protected Gate 3KV 495m @ VGS = -4.5V -1.14A Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. G

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