DMP2200UDW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Low RDS(ON) Minimizes Conduction Losses V(BR)DSS RDS(on) max ID max Low Input Capacitance 260m @VGS = -4.5V Fast Switching Speed -20V 500m @VGS = -2.5V -0.9 A Low Input/Output Leakage 1000m @VGS = -1.8V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes

DMP2200UFCLDual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Typical off board profile of 0.5mm - ideally suited for thin V(BR)DSS RDS(on) max ID max applications 200m @VGS = -4.5V -1.7 A Low RDS(ON) minimizes conduction losses 290m @VGS = -2.5V -1.3 A -20V PCB footprint of 2.56mm2 390m @VGS = -1.8V -1.1 A Totally Lead-Free & Fully RoHS Co

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

DMP2225LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT23RDS(ON)

DMP2215LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = 25C Very Low Gate Threshold Voltage VGS(th) 1V Low Input Capacitance 150m @ VGS = -4.5V -1.5A Fast Switching Speed 200m @ VGS = -2.5V -1A Low Input/Output Leakage -20V Totally Lead-Free & Fully R

DMP22M2UPS Green20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

DMP2240UDMDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals C

DMP22D6UTP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D

DMP22D4UFA20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max 0.48mm2 package footprint, 16 times smaller than SOT23 TA = 25C Low On-Resistance1.9 @ VGS = -4.5V -330mA Very low Gate Threshold Voltage, 1.0V max 2.4 @ VGS = -2.5V -300mA ESD Prot

DMP2240UWP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case: SOT-323 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals Connections

Product specificationDMP2215LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

DMP2240UWwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conver