DMP2200UDW - описание и поиск аналогов

 ..1. Size:324K  diodes
 dmp2200udw.pdf 

DMP2200UDW Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Low RDS(ON) Minimizes Conduction Losses V(BR)DSS RDS(on) max ID max Low Input Capacitance 260m @VGS = -4.5V Fast Switching Speed -20V 500m @VGS = -2.5V -0.9 A Low Input/Output Leakage 1000m @VGS = -1.8V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes

 6.1. Size:349K  diodes
 dmp2200ufcl.pdf 

DMP2200UFCL Dual P-CHANNEL ENHANCEMENT MODE MOSFET Summary Features Typical off board profile of 0.5mm - ideally suited for thin V(BR)DSS RDS(on) max ID max applications 200m @VGS = -4.5V -1.7 A Low RDS(ON) minimizes conduction losses 290m @VGS = -2.5V -1.3 A -20V PCB footprint of 2.56mm2 390m @VGS = -1.8V -1.1 A Totally Lead-Free & Fully RoHS Co

 9.1. Size:647K  1
 dmp22m2ups-13.pdf 

DMP22M2UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

 9.2. Size:182K  diodes
 dmp2225l.pdf 

DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT23 RDS(ON)

 9.3. Size:139K  diodes
 dmp2215l.pdf 

DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)

 9.4. Size:458K  diodes
 dmp2240uwq.pdf 

DMP2240UWQ P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max TA = 25 C Very Low Gate Threshold Voltage VGS(th) 1V Low Input Capacitance 150m @ VGS = -4.5V -1.5A Fast Switching Speed 200m @ VGS = -2.5V -1A Low Input/Output Leakage -20V Totally Lead-Free & Fully R

 9.5. Size:596K  diodes
 dmp22m2ups.pdf 

DMP22M2UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) max TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.5m @ VGS = -10V -60A -20V

 9.6. Size:162K  diodes
 dmp2240udm.pdf 

DMP2240UDM DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case SOT-26 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals C

 9.7. Size:135K  diodes
 dmp22d6ut.pdf 

DMP22D6UT P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-523 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020D

 9.8. Size:153K  diodes
 dmp22d4ufa.pdf 

DMP22D4UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Package Profile, 0.4mm Maximum Package height ID max V(BR)DSS RDS(ON) max 0.48mm2 package footprint, 16 times smaller than SOT23 TA = 25 C Low On-Resistance 1.9 @ VGS = -4.5V -330mA Very low Gate Threshold Voltage, 1.0V max 2.4 @ VGS = -2.5V -300mA ESD Prot

 9.9. Size:159K  diodes
 dmp2240uw.pdf 

DMP2240UW P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data P-Channel MOSFET Case SOT-323 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 150 m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020 200 m @ VGS = -2.5V Terminals Connections

 9.10. Size:80K  tysemi
 dmp2215l.pdf 

Product specification DMP2215L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 RDS(ON)

 9.11. Size:830K  cn vbsemi
 dmp2240uw.pdf 

DMP2240UW www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conver