DMP3085LSD Todos los transistores

 ..1. Size:235K  diodes
 dmp3085lsd.pdf

DMP3085LSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 70m @VGS = -10V -3.9A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

 5.1. Size:162K  diodes
 dmp3085lss.pdf

DMP3085LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(ON) MAX Package TA = +25 C Low Input Capacitance 70m @VGS = -10V -3.8A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

 9.1. Size:363K  1
 dmp3013sfv-13.pdf

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25 C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

 9.2. Size:270K  1
 dmp3010lpsq-13.pdf

DMP3010LPSQ Green P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications V(BR)DSS RDS(ON) TA = +25 C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On-State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

 9.3. Size:515K  1
 dmp3017sfv-7.pdf

 9.4. Size:531K  1
 dmp3007sps-13.pdf

DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

 9.5. Size:458K  1
 dmp3013sfv-7.pdf

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) max TC = +25 C Small form factor thermally efficient package enables higher density end products 9.5m @ VGS = -10V -35A -30V Occupies just 33% of the board area occupied b

 9.6. Size:416K  diodes
 dmp3028lk3.pdf

DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test In Production V(BR)DSS RDS(on) TC = +25 C Low On-Resistance Fast Switching Speed 25m @ VGS = -10V -27A -30V Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 38m @ VGS = -4.5V -22A Halogen and Antimony Free. Green Devi

 9.7. Size:305K  diodes
 dmp3037lss.pdf

DMP3037LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID V(BR)DSS RDS(on) max Low Input Capacitance TC = +25 C Fast Switching Speed 32m @ VGS = -10V -5.8A -30V Low Input/Output Leakage 50m @ VGS = -4.5V -4.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

 9.8. Size:240K  diodes
 dmp3015lss.pdf

DMP3015LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 11m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 17m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D

 9.9. Size:268K  diodes
 dmp3030sn.pdf

DMP3030SN P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SC-59 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity Level 1 per J-STD-020C Fast Switching Speed Lead Free By

 9.10. Size:442K  diodes
 dmp3017sfgq.pdf

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25 C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab

 9.11. Size:355K  diodes
 dmp3012lps.pdf

DMP3012LPS P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI 5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency Low Minimizes On State Losses 9m @ VGS = -10V -45A RDS(ON) -30V Low Input Capacitance 12m @ VGS = -4.5V -35A Fast Switching Speed

 9.12. Size:148K  diodes
 dmp3010lps.pdf

DMP3010LPS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID High Conversion Efficiency V(BR)DSS RDS(ON) TA = 25 C (Note 5) Low Minimizes On State Losses RDS(on) Low Input Capacitance 7.5m @ VGS = -10V -36A Fast Switching Speed -30V

 9.13. Size:396K  diodes
 dmp3010lpsq.pdf

DMP3010LPSQ Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TA = +25 C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

 9.14. Size:382K  diodes
 dmp3036ssd.pdf

DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25 C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 9.15. Size:546K  diodes
 dmp3056l.pdf

DMP3056L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 50m @ VGS =-10V -4.3A -30V Fast Switching Speed 70m @ VGS =-4.5V -3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen

 9.16. Size:194K  diodes
 dmp3035sfg.pdf

DMP3035SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -

 9.17. Size:371K  diodes
 dmp3036sss.pdf

 9.18. Size:354K  diodes
 dmp3065lvt.pdf

DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 42m @ VGS = -10V -5.1A -30V ESD Protected Gate 65m @ VGS = -4.5V -4.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 9.19. Size:200K  diodes
 dmp3098lss.pdf

DMP3098LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 65m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 115m @ VGS = -4.5V Moisture Sensitivity Leve

 9.20. Size:404K  diodes
 dmp3028lfde.pdf

DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance 25m @ VGS = -10V -6.8A -30V Fast Switching Speed -5.0A 38m @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

 9.21. Size:195K  diodes
 dmp3008sfg.pdf

DMP3008SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25 C density end products 17m @ VGS = -10V -8.6A Occupies just 33% of the board area occupied by SO-8 enabling -3

 9.22. Size:232K  diodes
 dmp3010lk3.pdf

DMP3010LK3 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = 25 C Fast Switching Speed "Green" Device (Note 1) 8m @ VGS = -10V -17A -30V Qualified to AEC-Q101 Standards for High Reliability 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Appl

 9.23. Size:584K  diodes
 dmp3017sfk.pdf

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25 C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 9.24. Size:335K  diodes
 dmp3018sfk.pdf

 9.25. Size:531K  diodes
 dmp3007sps.pdf

DMP3007SPS Green P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

 9.26. Size:131K  diodes
 dmp3056ldm.pdf

DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON) Case SOT-26 45m @VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Rating 94V-0 65m @VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminals Finish - Matte Tin anneale

 9.27. Size:277K  diodes
 dmp3098lq.pdf

DMP3098LQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on) max Low Gate Threshold Voltage TA = +25 C 70m @ VGS = -10V -3.8A Low Input Capacitance -30V 120m @ VGS = -4.5V -3.0A Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

 9.28. Size:176K  diodes
 dmp3050lvt.pdf

DMP3050LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 50m @ VGS = -10V -4.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 90m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 9.29. Size:435K  diodes
 dmp3007scg.pdf

DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On State Losses are Minimized BVDSS RDS(ON) Max TC = +25 C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m @ VGS = -10V -50A -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m @

 9.30. Size:197K  diodes
 dmp3020lss.pdf

DMP3020LSS SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 14m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 25m @ VGS = -4.5V Moisture Sensitivity Level 1 per J-STD-020D

 9.31. Size:420K  diodes
 dmp3036sfg.pdf

DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab

 9.32. Size:159K  diodes
 dmp3098lsd.pdf

DMP3098LSD DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Dual P-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -10V Moisture Sensitivity Level 1 per J-STD-020D

 9.33. Size:229K  diodes
 dmp3098ldm.pdf

DMP3098LDM P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON) Case SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m @VGS = -10V Moisture Sensitivity Level 1 per J-STD-020D 115m @VGS = -4.5V Terminals Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead F

 9.34. Size:169K  diodes
 dmp3035lss.pdf

 9.35. Size:227K  diodes
 dmp3050lss.pdf

DMP3050LSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 45m @ VGS = -10V -4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 80m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 9.36. Size:170K  diodes
 dmp3056lss.pdf

DMP3056LSS SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 45m @ VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -4.5V Moisture Sensitivity Level

 9.37. Size:172K  diodes
 dmp3056lsd.pdf

DMP3056LSD DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual P-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 45m @ VGS = -10V Moisture Sensitivity Level

 9.38. Size:234K  diodes
 dmp3028lsd.pdf

DMP3028LSD Maximum Ratings (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage 20 V VGSS Steady TA = +25 C -6 ID A State -4.7 TA = +70 C Continuous Drain Current (Note 5) VGS = 10V TA = +25 C -7.4 t

 9.39. Size:100K  diodes
 dmp3098l.pdf

DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 70m @ VGS = -10V, ID = -3.8A Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120m @ VGS = -4.5V, ID = -3.0A Moisture Sensitivity Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Fi

 9.40. Size:363K  diodes
 dmp3013sfv.pdf

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25 C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

 9.41. Size:342K  diodes
 dmp3068l.pdf

DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance V(BR)DS ID max Low Gate Threshold Voltage RDS(ON) max Package TA = +25 C S Low Input Capacitance Fast Switching Speed -3.9A 72m @ VGS = -10V Low Input/Output Leakage -30V SOT-23 85m @ VGS = -4.5V -3.6A Totally Lead-Free & Fully RoHS Compliant (

 9.42. Size:243K  diodes
 dmp3017sfg.pdf

DMP3017SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25 C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli

 9.43. Size:229K  diodes
 dmp3099l.pdf

DMP3099L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance Fast Switching Speed 65m @ VGS = -10V -3.8A -30V Low Input/Output Leakage 99m @ VGS = -4.5V -3.0A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony

 9.44. Size:537K  diodes
 dmp3036sfv.pdf

DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25 C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m

 9.45. Size:57K  tysemi
 dmp3030sn.pdf

Product specification DMP3030SN Features Mechanical Data Low On-Resistance Case SC59 Low Gate Threshold Voltage Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity Level 1 per J-STD-020C Fast Switching Speed Terminals Finish Matte Tin annealed ove

 9.46. Size:83K  tysemi
 dmp3098l.pdf

Product specification DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Gate Threshold Voltage V(BR)DSS RDS(on) max TA = 25 C Low Input Capacitance Fast Switching Speed 70m @ VGS = -10V -3.8A Low Input/Output Leakage -30V 120m @ VGS =-4.5V -3.0A Lead Free By Design/RoHS Compliant (Note 1)

 9.47. Size:280K  cn shikues
 dmp3098l.pdf

P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature -30V/-3.8A, RDS(ON) =55m (MAX) @VGS = -10V. 10V. RDS(ON) = 70m (MAX) @VGS = -4.5V. 4.5V. RDS(ON) =120m (MAX) @VGS = -2.5V. 2.5V. Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package

 9.48. Size:1755K  cn vbsemi
 dmp3010lps.pdf

DMP3010LPS www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.004 at VGS = - 10 V - 120 COMPLIANT - 30 130 nC 100 % Rg Tested 0.006 at VGS = - 4.5 V - 100 APPLICATIONS Notebook - Load Switch S DFN5X6 Top View Top View Bottom View 1 8 G 2 7 3 6 4

 9.49. Size:865K  cn vbsemi
 dmp3056lsd-13.pdf

DMP3056LSD-13 www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 To

 9.50. Size:840K  cn vbsemi
 dmp3025lk3-13.pdf

DMP3025LK3-13 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View

 9.51. Size:265K  inchange semiconductor
 dmp3028lk3.pdf

isc P-Channel MOSFET Transistor DMP3028LK3 FEATURES Drain Current I = -27A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.52. Size:265K  inchange semiconductor
 dmp3010lk3.pdf

isc P-Channel MOSFET Transistor DMP3010LK3 FEATURES Drain Current I = -17A@ T =25 D C Drain Source Voltage- V = -30V(Min) DSS Static Drain-Source On-Resistance R = 8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur