DMP3085LSD MOSFET. Datasheet pdf. Equivalent

   Type Designator: DMP3085LSD
   Marking Code: P3085SD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SO-8

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DMP3085LSD Datasheet (PDF)

..1. Size:235K diodes
dmp3085lsd.pdf pdf_icon

DMP3085LSDP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.9A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

5.1. Size:162K diodes
dmp3085lss.pdf pdf_icon

DMP3085LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) MAX Package TA = +25C Low Input Capacitance 70m @VGS = -10V -3.8A Fast Switching Speed -30V SO-8 95m @VGS = -4.5V -3.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qua

9.1. Size:363K 1
dmp3013sfv-13.pdf pdf_icon

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON)Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

9.2. Size:270K 1
dmp3010lpsq-13.pdf pdf_icon

DMP3010LPSQ GreenP-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On-State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

9.3. Size:515K 1
dmp3017sfv-7.pdf pdf_icon

NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID Max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) Max TC = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -40A -30V

9.4. Size:531K 1
dmp3007sps-13.pdf pdf_icon

DMP3007SPS GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) Minimizes On-State Losses ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 7m @ VGS = -10V -90A 100% Unclamped Inductive Switching Ensures More Reliability -30V ESD Pro

9.5. Size:458K 1
dmp3013sfv-7.pdf pdf_icon

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) max TC = +25C Small form factor thermally efficient package enables higher density end products 9.5m @ VGS = -10V -35A -30V Occupies just 33% of the board area occupied b

9.6. Size:416K diodes
dmp3028lk3.pdf pdf_icon

DMP3028LK3 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID 100% Unclamped Inductive Switch (UIS) Test In Production V(BR)DSS RDS(on) TC = +25C Low On-Resistance Fast Switching Speed 25m @ VGS = -10V -27A -30V Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) 38m @ VGS = -4.5V -22A Halogen and Antimony Free. Green Devi

9.7. Size:305K diodes
dmp3037lss.pdf pdf_icon

DMP3037LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on) max Low Input Capacitance TC = +25C Fast Switching Speed 32m @ VGS = -10V -5.8A -30V Low Input/Output Leakage 50m @ VGS = -4.5V -4.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Devi

9.8. Size:240K diodes
dmp3015lss.pdf pdf_icon

DMP3015LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 11m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 17m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

9.9. Size:268K diodes
dmp3030sn.pdf pdf_icon

DMP3030SNP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SC-59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Lead Free By

9.10. Size:442K diodes
dmp3017sfgq.pdf pdf_icon

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab

9.11. Size:355K diodes
dmp3012lps.pdf pdf_icon

DMP3012LPSP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low Minimizes On State Losses 9m @ VGS = -10V -45A RDS(ON)-30V Low Input Capacitance 12m @ VGS = -4.5V -35A Fast Switching Speed

9.12. Size:148K diodes
dmp3010lps.pdf pdf_icon

DMP3010LPSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID High Conversion EfficiencyV(BR)DSS RDS(ON) TA = 25C (Note 5) Low Minimizes On State Losses RDS(on) Low Input Capacitance 7.5m @ VGS = -10V -36A Fast Switching Speed -30V

9.13. Size:396K diodes
dmp3010lpsq.pdf pdf_icon

DMP3010LPSQ GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

9.14. Size:382K diodes
dmp3036ssd.pdf pdf_icon

DMP3036SSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -18.0A -30V Fast Switching Speed -15.0A 29m @ VGS = -5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

9.15. Size:546K diodes
dmp3056l.pdf pdf_icon

DMP3056L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 50m @ VGS =-10V -4.3A -30V Fast Switching Speed 70m @ VGS =-4.5V -3.7A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen

9.16. Size:194K diodes
dmp3035sfg.pdf pdf_icon

DMP3035SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 20m @ VGS = -10V -9.5 A Occupies just 33% of the board area occupied by SO-8 enabling -

9.17. Size:371K diodes
dmp3036sss.pdf pdf_icon

DMP3036SSS P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-Resistance V(BR)DSS RDS(on) max TC = +25C Low Input Capacitance 20m @ VGS = -10V -19.5A -30V Fast Switching Speed -16.2A 29m @ VGS = -5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

9.18. Size:354K diodes
dmp3065lvt.pdf pdf_icon

DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 42m @ VGS = -10V -5.1A -30V ESD Protected Gate 65m @ VGS = -4.5V -4.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

9.19. Size:200K diodes
dmp3098lss.pdf pdf_icon

DMP3098LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 65m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 115m @ VGS = -4.5V Moisture Sensitivity: Leve

9.20. Size:404K diodes
dmp3028lfde.pdf pdf_icon

DMP3028LFDE 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TA = +25C Low On-Resistance 25m @ VGS = -10V -6.8A -30V Fast Switching Speed -5.0A 38m @ VGS = -4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

9.21. Size:195K diodes
dmp3008sfg.pdf pdf_icon

DMP3008SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = 25C density end products 17m @ VGS = -10V -8.6A Occupies just 33% of the board area occupied by SO-8 enabling -3

9.22. Size:232K diodes
dmp3010lk3.pdf pdf_icon

DMP3010LK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed "Green" Device (Note 1) 8m @ VGS = -10V -17A -30V Qualified to AEC-Q101 Standards for High Reliability 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Appl

9.23. Size:584K diodes
dmp3017sfk.pdf pdf_icon

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

9.24. Size:335K diodes
dmp3018sfk.pdf pdf_icon

DMP3018SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14.5m @ VGS = -10V -10.2A Low Input/Output Leakage -30V 25.5m @ VGS = -4.5V -7.7A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

9.25. Size:531K diodes
dmp3007sps.pdf pdf_icon

9.26. Size:131K diodes
dmp3056ldm.pdf pdf_icon

DMP3056LDMP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low RDS(ON): Case: SOT-26 45m @VGS = -10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Rating 94V-0 65m @VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish - Matte Tin anneale

9.27. Size:277K diodes
dmp3098lq.pdf pdf_icon

DMP3098LQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceIDV(BR)DSS RDS(on) max Low Gate Threshold Voltage TA = +25C 70m@ VGS = -10V -3.8A Low Input Capacitance -30V 120m@ VGS = -4.5V -3.0A Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

9.28. Size:176K diodes
dmp3050lvt.pdf pdf_icon

DMP3050LVTP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 90m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

9.29. Size:435K diodes
dmp3007scg.pdf pdf_icon

DMP3007SCG 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On State Losses are Minimized BVDSS RDS(ON) Max TC = +25C Small Form Factor Thermally Efficient Package Enables Higher Density End Products 6.8m @ VGS = -10V -50A -30V Occupies Just 33% of the Board Area Occupied by SO-8 Enabling 13m @

9.30. Size:197K diodes
dmp3020lss.pdf pdf_icon

DMP3020LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 14m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 25m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

9.31. Size:420K diodes
dmp3036sfg.pdf pdf_icon

DMP3036SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized. V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products. 20m @ VGS = -10V - 8.7 A -30V Occupies just 33% of the board area occupied by SO-8 enab

9.32. Size:159K diodes
dmp3098lsd.pdf pdf_icon

DMP3098LSDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D

9.33. Size:229K diodes
dmp3098ldm.pdf pdf_icon

DMP3098LDMP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m @VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D 115m @VGS = -4.5V Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead F

9.34. Size:169K diodes
dmp3035lss.pdf pdf_icon

DMP3035LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 14m @ VGS = -20V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 18m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020

9.35. Size:227K diodes
dmp3050lss.pdf pdf_icon

DMP3050LSSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 45m @ VGS = -10V -4.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 80m @ VGS = -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

9.36. Size:170K diodes
dmp3056lss.pdf pdf_icon

DMP3056LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 45m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -4.5V Moisture Sensitivity: Level

9.37. Size:172K diodes
dmp3056lsd.pdf pdf_icon

DMP3056LSDDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 45m @ VGS = -10V Moisture Sensitivity: Level

9.38. Size:234K diodes
dmp3028lsd.pdf pdf_icon

DMP3028LSD Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -30 V Gate-Source Voltage 20 V VGSS Steady TA = +25C -6 ID A State -4.7 TA = +70C Continuous Drain Current (Note 5) VGS = 10V TA = +25C -7.4 t

9.39. Size:100K diodes
dmp3098l.pdf pdf_icon

DMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-2370m @ VGS = -10V, ID = -3.8A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120m @ VGS = -4.5V, ID = -3.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Fi

9.40. Size:363K diodes
dmp3013sfv.pdf pdf_icon

9.41. Size:342K diodes
dmp3068l.pdf pdf_icon

DMP3068L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance V(BR)DS ID max Low Gate Threshold Voltage RDS(ON) max Package TA = +25C S Low Input Capacitance Fast Switching Speed -3.9A 72m @ VGS = -10V Low Input/Output Leakage -30V SOT-23 85m @ VGS = -4.5V -3.6A Totally Lead-Free & Fully RoHS Compliant (

9.42. Size:243K diodes
dmp3017sfg.pdf pdf_icon

DMP3017SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli

9.43. Size:229K diodes
dmp3099l.pdf pdf_icon

DMP3099LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low Gate Threshold Voltage V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 65m @ VGS = -10V -3.8A -30V Low Input/Output Leakage 99m @ VGS = -4.5V -3.0A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony

9.44. Size:537K diodes
dmp3036sfv.pdf pdf_icon

DMP3036SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features Low RDS(ON) Ensures On State Losses Are Minimized ID Max BVDSS RDS(ON) Max Small Form Factor Thermally Efficient Package Enables Higher TC = +25C Density End Products 20m @ VGS = -10V Occupies Just 33% of The Board Area Occupied by SO-8 -30V -30A 29m

9.45. Size:57K tysemi
dmp3030sn.pdf pdf_icon

Product specificationDMP3030SNFeatures Mechanical Data Low On-Resistance Case: SC59 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020C Fast Switching Speed Terminals: Finish Matte Tin annealed ove

9.46. Size:83K tysemi
dmp3098l.pdf pdf_icon

Product specificationDMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Gate Threshold Voltage V(BR)DSS RDS(on) maxTA = 25C Low Input Capacitance Fast Switching Speed 70m@ VGS = -10V -3.8A Low Input/Output Leakage -30V 120m@ VGS =-4.5V -3.0A Lead Free By Design/RoHS Compliant (Note 1)

9.47. Size:280K cn shikues
dmp3098l.pdf pdf_icon

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -30V/-3.8A, RDS(ON) =55m(MAX) @VGS = -10V.10V. RDS(ON) = 70m(MAX) @VGS = -4.5V.4.5V. RDS(ON) =120m(MAX) @VGS = -2.5V.2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package

9.48. Size:1755K cn vbsemi
dmp3010lps.pdf pdf_icon

DMP3010LPSwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G27364

9.49. Size:865K cn vbsemi
dmp3056lsd-13.pdf pdf_icon

DMP3056LSD-13www.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25To

9.50. Size:840K cn vbsemi
dmp3025lk3-13.pdf pdf_icon

DMP3025LK3-13www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop View

9.51. Size:265K inchange semiconductor
dmp3028lk3.pdf pdf_icon

isc P-Channel MOSFET Transistor DMP3028LK3FEATURESDrain Current I = -27A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.52. Size:265K inchange semiconductor
dmp3010lk3.pdf pdf_icon

isc P-Channel MOSFET Transistor DMP3010LK3FEATURESDrain Current I = -17A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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DMP3085LSD MOSFET. Datasheet pdf. Equivalent

DMP3085LSD Datasheet (PDF)

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