DMP3105LVT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMP3105LVT
   Código: 31P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 1.15 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 3.1 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1.5 V
   Carga de la puerta (Qg): 9 nC
   Tiempo de subida (tr): 17.7 nS
   Conductancia de drenaje-sustrato (Cd): 47 pF
   Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
   Paquete / Cubierta: TSOT26

Búsqueda de reemplazo de MOSFET DMP3105LVT

DMP3105LVT Datasheet (PDF)

..1. Size:184K diodes
dmp3105lvt.pdf

DMP3105LVT30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Low Input/Output Leakage 75m @ VGS = -10V -3.9A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) -30V 105m @ VGS = -4.5V -3.3A "Green" Device (Note 2)

8.1. Size:119K diodes
dmp3100l.pdf

DMP3100LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23100m @ VGS = -10V, ID = -2.7A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 170m @ VGS = -4.5V, ID = -2.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: F

9.1. Size:539K diodes
dmp3125l.pdf

DMP3125L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 95m @ VGS = -10V -2.5A Fast Switching Speed -30V -2.0A 145m @ VGS = -4.5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications

9.2. Size:200K diodes
dmp31d0u.pdf

A Product Line ofDiodes IncorporatedDMP31D0U30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage Max ID Fast Switching Speed V(BR)DSS Max RDS(on) @ TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 1 @ VGS = -4.5V -0.67A ESD Protected Gate 2KV

9.3. Size:220K diodes
dmp31d0ufb4.pdf

A Product Line ofDiodes IncorporatedDMP31D0UFB430V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 thirteen times smaller than SOT23 Max ID 0.4mm profile ideal for low profile applications V(BR)DSS Max RDS(on) @ TA = 25C Low Gate Threshold Voltage Fast Switching Speed 1 @ VGS = -4.5V -0.76A

9.4. Size:107K diodes
dmp3160l.pdf

DMP3160LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

9.5. Size:107K diodes
dmp3120l.pdf

DMP3120LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)

9.6. Size:120K diodes
dmp3130l.pdf

DMP3130LP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)

9.7. Size:164K tysemi
dmp3160l.pdf

Product specificationDMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on)TA = +25C Low Gate Threshold Voltage Low Input Capacitance 122m @ VGS = -10V -2.7A -30V Fast Switching Speed 190m @ VGS = -4.5V -2.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

9.8. Size:162K tysemi
dmp3120l.pdf