DMP3105LVT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMP3105LVT
Маркировка: 31P
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.15 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 3.1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9 nC
Время нарастания (tr): 17.7 ns
Выходная емкость (Cd): 47 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm
Тип корпуса: TSOT26
Аналог (замена) для DMP3105LVT
DMP3105LVT Datasheet (PDF)
dmp3105lvt.pdf
DMP3105LVT30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Low Input/Output Leakage 75m @ VGS = -10V -3.9A Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) -30V 105m @ VGS = -4.5V -3.3A "Green" Device (Note 2)
dmp3100l.pdf
DMP3100LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23100m @ VGS = -10V, ID = -2.7A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 170m @ VGS = -4.5V, ID = -2.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: F
dmp3125l.pdf
DMP3125L 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance BVDSS RDS(ON) max TA = +25C Low Input Capacitance 95m @ VGS = -10V -2.5A Fast Switching Speed -30V -2.0A 145m @ VGS = -4.5V Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications
dmp31d0u.pdf
A Product Line ofDiodes IncorporatedDMP31D0U30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage Max ID Fast Switching Speed V(BR)DSS Max RDS(on) @ TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 1 @ VGS = -4.5V -0.67A ESD Protected Gate 2KV
dmp31d0ufb4.pdf
A Product Line ofDiodes IncorporatedDMP31D0UFB430V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 thirteen times smaller than SOT23 Max ID 0.4mm profile ideal for low profile applications V(BR)DSS Max RDS(on) @ TA = 25C Low Gate Threshold Voltage Fast Switching Speed 1 @ VGS = -4.5V -0.76A
dmp3160l.pdf
DMP3160LP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
dmp3120l.pdf
DMP3120LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
dmp3130l.pdf
DMP3130LP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)
dmp3160l.pdf
Product specificationDMP3160L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceIDV(BR)DSS RDS(on)TA = +25C Low Gate Threshold Voltage Low Input Capacitance 122m @ VGS = -10V -2.7A -30V Fast Switching Speed 190m @ VGS = -4.5V -2.0A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
dmp3120l.pdf
Product specificationDMP3120LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
dmp3130l.pdf
Product specificationDMP3130LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)
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