SFP9530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFP9530
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET SFP9530

SFP9530 Datasheet (PDF)

..1. Size:232K fairchild semi
sfp9530.pdf

SFP9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. Sou

..2. Size:498K samsung
sfp9530.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

9.1. Size:229K fairchild semi
sfp9520.pdf

SFP9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. Source

9.2. Size:495K samsung
sfp9520.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

9.3. Size:503K samsung
sfp9540.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

9.4. Size:497K samsung
sfp9510.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum R

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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