SFP9530 Todos los transistores

 

SFP9530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFP9530
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

SFP9530 Datasheet (PDF)

 ..1. Size:232K  fairchild semi
 sfp9530.pdf pdf_icon

SFP9530

SFP9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. Sou

 ..2. Size:498K  samsung
 sfp9530.pdf pdf_icon

SFP9530

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:229K  fairchild semi
 sfp9520.pdf pdf_icon

SFP9530

SFP9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. Source

 9.2. Size:495K  samsung
 sfp9520.pdf pdf_icon

SFP9530

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

MOSTRAR MÁS

Otros transistores... SFM9014 , SFM9110 , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , K2611 , SFP9540 , SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 .

History: NCE0250D | WSF20P03 | IPI80CN10NG

 

 
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