All MOSFET. SFP9530 Datasheet

 

SFP9530 Datasheet and Replacement


   Type Designator: SFP9530
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220
 

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SFP9530 Datasheet (PDF)

 ..1. Size:232K  fairchild semi
 sfp9530.pdf pdf_icon

SFP9530

SFP9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. Sou

 ..2. Size:498K  samsung
 sfp9530.pdf pdf_icon

SFP9530

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:229K  fairchild semi
 sfp9520.pdf pdf_icon

SFP9530

SFP9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. Source

 9.2. Size:495K  samsung
 sfp9520.pdf pdf_icon

SFP9530

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

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Keywords - SFP9530 MOSFET datasheet

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