SFP9540 Todos los transistores

 

SFP9540 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFP9540
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 132 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 17 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 43 nC
   Tiempo de subida (tr): 22 nS
   Conductancia de drenaje-sustrato (Cd): 240 pF
   Resistencia entre drenaje y fuente RDS(on): 0.2 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET SFP9540

 

SFP9540 Datasheet (PDF)

 ..1. Size:503K  samsung
sfp9540.pdf

SFP9540
SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

 9.1. Size:229K  fairchild semi
sfp9520.pdf

SFP9540
SFP9540

SFP9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. Source

 9.2. Size:232K  fairchild semi
sfp9530.pdf

SFP9540
SFP9540

SFP9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. Sou

 9.3. Size:495K  samsung
sfp9520.pdf

SFP9540
SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

 9.4. Size:498K  samsung
sfp9530.pdf

SFP9540
SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.5. Size:497K  samsung
sfp9510.pdf

SFP9540
SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum R

Otros transistores... SFM9110 , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , SFP9530 , AO3400 , SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 , SFP9644 .

 

 
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