Справочник MOSFET. SFP9540

 

SFP9540 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFP9540
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 132 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 22 ns
   Cossⓘ - Выходная емкость: 240 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO220

 Аналог (замена) для SFP9540

 

 

SFP9540 Datasheet (PDF)

 ..1. Size:503K  samsung
 sfp9540.pdf

SFP9540 SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rati

 9.1. Size:229K  fairchild semi
 sfp9520.pdf

SFP9540 SFP9540

SFP9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. Source

 9.2. Size:232K  fairchild semi
 sfp9530.pdf

SFP9540 SFP9540

SFP9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen 175oC Opereting TemperatureTO-220n Extended Safe Operating Arean Lower Leakage Current : -10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. Sou

 9.3. Size:495K  samsung
 sfp9520.pdf

SFP9540 SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rat

 9.4. Size:498K  samsung
 sfp9530.pdf

SFP9540 SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

 9.5. Size:497K  samsung
 sfp9510.pdf

SFP9540 SFP9540

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum R

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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