DMT6016LFDF Todos los transistores

 

DMT6016LFDF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMT6016LFDF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.82 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.2 nS

Cossⓘ - Capacitancia de salida: 282 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: U-DFN2020-6

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DMT6016LFDF datasheet

 ..1. Size:337K  diodes
 dmt6016lfdf.pdf pdf_icon

DMT6016LFDF

DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max 100% Unclamped Inductive Switch (UIS) test in production V(BR)DSS RDS(ON) max TA = +25 C 0.6mm profile ideal for low profile applications 16m @ VGS = 10V 8.9A PCB footprint of 4mm2 60V 27m @ VGS = 4.5V 6.8A Low On-Resistance Totally Lead-Free & Ful

 6.1. Size:639K  1
 dmt6016lps-13.pdf pdf_icon

DMT6016LFDF

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

 6.2. Size:296K  diodes
 dmt6016lss.pdf pdf_icon

DMT6016LFDF

DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 18m @ VGS = 10V 9.2 A Fast Switching Speed 60V 7.5 A 28m @ VGS = 4.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 6.3. Size:602K  diodes
 dmt6016lps.pdf pdf_icon

DMT6016LFDF

DMT6016LPS 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 15m @ VGS = 10V 32 A Low RDS(ON) Minimizes On-State Losses 60V 24 A 24m @ VGS = 4.5V Low Input Capacitance Fast Switching Speed

MOSTRAR MÁS

Otros transistores... DMS3015SSS , DMS3016SSS , DMS3017SSD , DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , STP75NF75 , DMT6016LPS , DMT6016LSS , DMT8012LFG , DMTH8012LK3 , DN1509 , DN2450 , DN2470 , DN2530 .

History: AP25N170I | H2N60U

 

 

 


History: AP25N170I | H2N60U

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