DMTH8012LK3 Todos los transistores

 

DMTH8012LK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMTH8012LK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 177 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: TO-252
 

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DMTH8012LK3 Datasheet (PDF)

 ..1. Size:550K  diodes
 dmth8012lk3.pdf pdf_icon

DMTH8012LK3

Green DMTH8012LK3 80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID max BVDSS RDS(ON) max TC = +25 environments C Low RDS(ON) ensures on state losses are minimized 16m @ VGS = 10V 50A High Conversion Efficiency 80V Low Input Capacitance 21m @ VGS = 4.5V 43A

 5.1. Size:519K  1
 dmth8012lpsw-13.pdf pdf_icon

DMTH8012LK3

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 5.2. Size:519K  diodes
 dmth8012lpsw.pdf pdf_icon

DMTH8012LK3

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 8.1. Size:499K  1
 dmth8003sps-13.pdf pdf_icon

DMTH8012LK3

DMTH8003SPS Green80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V

MOSTRAR MÁS

Otros transistores... DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS , DMT6016LSS , DMT8012LFG , 5N60 , DN1509 , DN2450 , DN2470 , DN2530 , DN2535 , DN2540 , DN2625 , DN3135 .

History: N0434N | HGD090NE6A | P1504BVG | 2SK17 | CEM6608 | 2SK2038 | SVGP159R3NL5ATR

 

 
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