All MOSFET. DMTH8012LK3 Datasheet

 

DMTH8012LK3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMTH8012LK3
   Marking Code: H8012L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO-252

 DMTH8012LK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMTH8012LK3 Datasheet (PDF)

 ..1. Size:550K  diodes
 dmth8012lk3.pdf

DMTH8012LK3 DMTH8012LK3

Green DMTH8012LK3 80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C ideal for high ambient temperature ID max BVDSS RDS(ON) max TC = +25 environments C Low RDS(ON) ensures on state losses are minimized 16m @ VGS = 10V 50A High Conversion Efficiency 80V Low Input Capacitance 21m @ VGS = 4.5V 43A

 5.1. Size:519K  1
 dmth8012lpsw-13.pdf

DMTH8012LK3 DMTH8012LK3

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 5.2. Size:519K  diodes
 dmth8012lpsw.pdf

DMTH8012LK3 DMTH8012LK3

Green DMTH8012LPSW 80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) TC = +25 Environments C 53.7A 17m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable 80V 23.5m @ VGS = 4.5V 44.3A and Robust End Appli

 8.1. Size:499K  1
 dmth8003sps-13.pdf

DMTH8012LK3 DMTH8012LK3

DMTH8003SPS Green80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V

 8.2. Size:499K  diodes
 dmth8003sps.pdf

DMTH8012LK3 DMTH8012LK3

DMTH8003SPS Green80V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (Type K) Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 Environments C (Note 9) 100% Unclamped Inductive Switching Test in Production 3.9m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 80V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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