DN3525 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DN3525
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: SOT-89

Búsqueda de reemplazo de MOSFET DN3525

DN3525 Datasheet (PDF)

..1. Size:463K supertex
dn3525.pdf

DN3525N-Channel Depletion-ModeVertical DMOS FETsFeatures General DescriptionThe Supertex DN3525 is a low threshold depletion-mode High input impedance(normally-on) transistor utilizing an advanced vertical Low input capacitanceDMOS structure and Supertexs well-proven silicon-gate Fast switching speedsmanufacturing process. This combination produces a device

9.1. Size:123K fairchild semi
fdn352ap.pdf

August 2005FDN352APSingle P-Channel, PowerTrench MOSFET Features General Description 1.3 A, 30V RDS(ON) = 180 m @ VGS = 10V This P-Channel Logic Level MOSFET is produced using Fair-1.1 A, 30V RDS(ON) = 300 m @ VGS = 4.5V child Semiconductor advanced Power Trench process that hasbeen especially tailored to minimize the on-state resistance and High pe

9.2. Size:240K onsemi
fdn352ap.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.3. Size:1015K kexin
fdn352ap-3.pdf

SMD Type MOSFETP-Channel MOSFETFDN352AP (KDN352AP)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-1.3 A (VGS =-10V)1 2 RDS(ON) 180m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 300m (VGS =-4.5V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb

9.4. Size:1200K kexin
fdn352ap.pdf

SMD Type MOSFETP-Channel MOSFETFDN352AP (KDN352AP)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) =-30V1 2 ID =-1.3 A (VGS =-10V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 180m (VGS =-10V)+0.11.9 -0.1 RDS(ON) 300m (VGS =-4.5V)1. Gate2. SourceD3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol R

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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