DN3525 Todos los transistores

 ..1. Size:463K  supertex
 dn3525.pdf

DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN3525 is a low threshold depletion-mode High input impedance (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertex s well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device

 9.1. Size:123K  fairchild semi
 fdn352ap.pdf

August 2005 FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description 1.3 A, 30V RDS(ON) = 180 m @ VGS = 10V This P-Channel Logic Level MOSFET is produced using Fair- 1.1 A, 30V RDS(ON) = 300 m @ VGS = 4.5V child Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and High pe

 9.2. Size:240K  onsemi
 fdn352ap.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:1015K  kexin
 fdn352ap-3.pdf

SMD Type MOSFET P-Channel MOSFET FDN352AP (KDN352AP) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-30V ID =-1.3 A (VGS =-10V) 1 2 RDS(ON) 180m (VGS =-10V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 RDS(ON) 300m (VGS =-4.5V) 1. Gate D 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symb

 9.4. Size:1200K  kexin
 fdn352ap.pdf

SMD Type MOSFET P-Channel MOSFET FDN352AP (KDN352AP) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) =-30V 1 2 ID =-1.3 A (VGS =-10V) +0.1 +0.05 0.95 -0.1 0.1-0.01 RDS(ON) 180m (VGS =-10V) +0.1 1.9 -0.1 RDS(ON) 300m (VGS =-4.5V) 1. Gate 2. Source D 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol R