DN3525N-Channel Depletion-ModeVertical DMOS FETsFeatures General DescriptionThe Supertex DN3525 is a low threshold depletion-mode High input impedance(normally-on) transistor utilizing an advanced vertical Low input capacitanceDMOS structure and Supertexs well-proven silicon-gate Fast switching speedsmanufacturing process. This combination produces a device

August 2005FDN352APSingle P-Channel, PowerTrench MOSFET Features General Description 1.3 A, 30V RDS(ON) = 180 m @ VGS = 10V This P-Channel Logic Level MOSFET is produced using Fair-1.1 A, 30V RDS(ON) = 300 m @ VGS = 4.5V child Semiconductor advanced Power Trench process that hasbeen especially tailored to minimize the on-state resistance and High pe

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETP-Channel MOSFETFDN352AP (KDN352AP)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) =-30V ID =-1.3 A (VGS =-10V)1 2 RDS(ON) 180m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 300m (VGS =-4.5V)1. GateD2. Source3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symb

SMD Type MOSFETP-Channel MOSFETFDN352AP (KDN352AP)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) =-30V1 2 ID =-1.3 A (VGS =-10V)+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 180m (VGS =-10V)+0.11.9 -0.1 RDS(ON) 300m (VGS =-4.5V)1. Gate2. SourceD3. DrainG S Absolute Maximum Ratings Ta = 25Parameter Symbol R