36N06 Todos los transistores

 ..1. Size:242K  inchange semiconductor
 36n06.pdf

isc N-Channel MOSFET Transistor 36N06 FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current capability Low gate charge ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V

 0.1. Size:210K  motorola
 mtb36n06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06V/D Designer's Data Sheet MTB36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.04 OHM area product about o

 0.2. Size:165K  motorola
 mtp36n06v.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n

 0.3. Size:188K  motorola
 mtp36n06v .pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP36N06V/D Designer's Data Sheet MTP36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on resis- 32 AMPERES tance area product about one half that of standard MOSFETs. This 60 VOLTS n

 0.4. Size:278K  motorola
 mtb36n06erev0.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06E/D Designer's Data Sheet MTB36N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 36 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.04 OHM than any existing surface mo

 0.5. Size:241K  motorola
 mtb36n06vrev2x.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06V/D Designer's Data Sheet MTB36N06V TMOS V Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resistance RDS(on) = 0.04 OHM area product about o

 0.6. Size:239K  motorola
 mtb36n06e.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB36N06E/D Designer's Data Sheet MTB36N06E TMOS E-FET. Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 36 AMPERES 60 VOLTS The D2PAK package has the capability of housing a larger die RDS(on) = 0.04 OHM than any existing surface mo

 0.7. Size:54K  philips
 phb36n06e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125 W

 0.8. Size:51K  philips
 php36n06e.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A automotive applications, Switched Ptot Total power dissipation 125 W Mode

 0.9. Size:54K  philips
 phb36n06e.pdf

Philips Semiconductors Product specification PowerMOS transistor PHB36N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 60 V mount applications. ID Drain current (DC) 41 A The device is intended for use in Ptot Total power dissipation 125 W

 0.10. Size:51K  philips
 php36n06e 1.pdf

Philips Semiconductors Product specification PowerMOS transistor PHP36N06E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A automotive applications, Switched Ptot Total power dissipation 125 W Mode

 0.11. Size:414K  st
 stp36n06.pdf

STP36N06 STP36N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N06 60 V

 0.12. Size:325K  st
 stv36n06.pdf

 0.13. Size:401K  st
 stp36n06l.pdf

STP36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP36N05L 60 V

 0.14. Size:202K  onsemi
 mtp36n06v.pdf

MTP36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high http //onsemi.com speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge 32 AMPERES circuits where di

 0.15. Size:370K  inpower semi
 ftd36n06n.pdf

FTD36N06N N-Channel MOSFET Pb Lead Free Package and Finish Applications VDSS RDS(ON) (Typ.) ID Automotive DC Motor Control 60V 28 m 25A DC-DC Converters and Off-Line UPS Features RoHS Compliant D Low ON Resistance D Low Gate Charge Peak Current vs Pulse Width Curve G G S TO-252 Ordering Information Not to Scale S PART NUMBER PACKAGE BRAND

 0.16. Size:497K  stansontech
 st36n06.pdf

ST36N06 N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 60V/20.0A, RDS(ON) = 30m (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 45m @VGS = 4.5V Super high density cell design f

 0.17. Size:737K  cn vbsemi
 ftu36n06n.pdf

FTU36N06N www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Seconda

 0.18. Size:711K  cn vbsemi
 ftd36n06n.pdf

FTD36N06N www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n